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IRF7831TRPBF

Name: IRF7831TRPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 30V 21A 8SO

Производитель
Мфр. Часть #IRF7831TRPBF
Пакет
Лист данных IRF7831TRPBF DataSheet
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Спецификации

Supplier	Infineon Technologies
Package	Tape & Reel (TR),Cut Tape (CT)
Series	HEXFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	30 V
Current-ContinuousDrain(Id)@25°C	21A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	3.6mOhm @ 20A, 10V
Vgs(th)(Max)@Id	2.35V @ 250µA
GateCharge(Qg)(Max)@Vgs	60 nC @ 4.5 V
Vgs(Max)	±12V
InputCapacitance(Ciss)(Max)@Vds	6240 pF @ 15 V
PowerDissipation(Max)	2.5W (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	8-SO

Обзор

Description

The IRF7831TRPBF is a N-channel MOSFET designed for high-efficiency power applications. It features a low on-resistance (RDS(on)), enabling it to handle high current loads while minimizing power loss and heat generation. With a maximum continuous drain current of 60A and a maximum drain-source voltage (VDS) of 30V, it is suitable for various applications, including DC-DC converters, motor drives, and power management systems.
The IRF7831TRPBF is housed in a TO-220 package, facilitating effective thermal management. Its fast switching speeds make it ideal for high-frequency applications, while its gate threshold voltage (VGS(th)) ensures compatibility with standard logic levels. The "TRPBF" suffix indicates that it is available in a tape and reel format for automated assembly and is lead-free, complying with RoHS standards.
Overall, the IRF7831TRPBF is a versatile and reliable choice for engineers seeking efficient MOSFET solutions in modern electronic designs.

Features

The IRF7831TRPBF is an N-channel MOSFET designed for high-performance applications. Its key features include:
1. V_DS Rating: 30V maximum drain-source voltage, making it suitable for low-voltage applications.
2. I_D Rating: Continuous drain current of up to 75A, enabling it to handle substantial loads.
3. R_DS(on): Low on-resistance of approximately 5.5 mΩ at V_GS = 10V, which minimizes power losses and enhances efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, facilitating easy drive with standard logic levels.
5. Package: Offered in DPAK or TO-220 packages, ensuring good thermal performance and ease of mounting.
6. Fast Switching: Suitable for applications requiring quick switching speeds, such as power converters and motor drives.
7. RoHS Compliant: Meets environmental regulations, making it eco-friendly.
These features make the IRF7831TRPBF ideal for use in power management, switching applications, and battery-powered devices.

Package

The IRF7831TRPBF is packaged in a TO-220 form factor. This type of package is designed for high-power applications, providing efficient thermal dissipation and ease of mounting on heatsinks.

Pinout

The IRF7831TRPBF is an N-channel MOSFET that typically comes in a TO-220 package. It has a total of three pins. The functions of these pins are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow from the Drain to the Source.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is in the "on" state.
3. Source (S): This pin is where the current enters the MOSFET.
It is important to note that the specific configurations may vary slightly depending on the package type, but the TO-220 configuration is common for this component. Always refer to the manufacturer's datasheet for precise pin assignments and specifications.

Manufacturer

The IRF7831TRPBF is manufactured by Texas Instruments (TI), a prominent American technology company. Texas Instruments specializes in designing and producing a wide range of semiconductor products, including analog chips, embedded processors, and digital signal processors. The company is known for its innovation in electronics and is a leading supplier in the semiconductor industry, catering to various sectors such as automotive, industrial, communications, and consumer electronics. TI focuses on providing high-performance and energy-efficient solutions, making it a significant player in the global market for integrated circuits and electronic components.

Application

The IRF7831TRPBF is an N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, motor drives, power supplies, and switching regulators. It is suitable for high-speed switching and efficient power handling in systems such as industrial automation, renewable energy systems, and electric vehicles. Its high current capability and low on-resistance make it ideal for applications requiring robust performance and thermal efficiency.

Equivalent

The IRF7831TRPBF is an N-channel MOSFET. Equivalent products include:
1. STP16NF06 - STMicroelectronics
2. FDPF16N06 - Fairchild Semiconductor
3. BSS138 - N-channel MOSFET from various manufacturers, though with lower ratings.
4. IRF3205 - Similar high-current MOSFET, but check specifications for exact requirements.
Always verify electrical characteristics and package compatibility before substituting.

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