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IRF610PBF

Name: IRF610PBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 200V 3.3A TO220AB

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Мфр. Часть #IRF610PBF
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Спецификации

Supplier	Vishay Siliconix
Package	Tube
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	200 V
Current-ContinuousDrain(Id)@25°C	3.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	1.5Ohm @ 2A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	8.2 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	140 pF @ 25 V
PowerDissipation(Max)	36W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220AB

Обзор

Description

The IRF610PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 3.5A at a case temperature of 25°C. This transistor is characterized by a low on-resistance (R_DS(on)), which enhances its efficiency in power applications.
The IRF610PBF is commonly used in power supplies, motor control, and various switching applications due to its fast switching capabilities and robust performance. It has a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, allowing for easy interfacing with low-voltage control signals. The device is packaged in a TO-220 format, providing good thermal performance.
The “PBF” suffix indicates that it is lead-free, complying with environmental regulations like RoHS. As with all MOSFETs, proper thermal management and gate drive considerations are crucial for optimal performance in circuit designs.

Features

The IRF610PBF is an N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, allowing it to handle high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 3.5A, making it suitable for medium-power applications.
3. R_DS(on): It offers a low on-resistance of typically 0.4 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 2-4V, enabling easy drive with logic-level signals.
5. Package Type: Available in a TO-220 package, facilitating efficient heat dissipation.
6. Fast Switching: High-speed switching capabilities make it ideal for switching power supplies and motor controls.
These features make the IRF610PBF versatile for various electronic and electrical applications, ensuring efficient performance and reliability.

Package

The IRF610PBF is typically packaged in a TO-220 form factor. This package type is characterized by its metal tab for heat dissipation and is widely used for power transistors due to its ability to handle high current and voltage.

Pinout

The IRF610PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G) - Pin 1: This pin controls the MOSFET and is used to turn it on or off by applying a voltage. A positive voltage relative to the source is required to enhance the channel and allow current to flow.
2. Drain (D) - Pin 2: This pin is where the load current enters the MOSFET. It connects to the load side of the circuit.
3. Source (S) - Pin 3: This is the terminal where the current exits the MOSFET and is connected to the ground or the lower potential side of the circuit.
The IRF610PBF is commonly used in switching and amplification applications due to its high voltage and current handling capabilities. It is available in a TO-220 package, making it suitable for various electronic applications.

Manufacturer

The IRF610PBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in producing a wide range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company focuses on technologies related to power management, sensors, and security, and it plays a significant role in the development of innovative and efficient electronic components. Infineon is known for its commitment to quality and sustainability in its manufacturing processes.

Application

The IRF610PBF is an N-channel MOSFET commonly used in various applications, including:
1. Power Switching: Used in power supplies and DC-DC converters.
2. Motor Control: Employed in driving motors and actuators.
3. Amplifiers: Utilized in audio amplifiers and RF applications.
4. Lighting: Implemented in LED drivers and dimming circuits.
5. H-Bridge Circuits: Used in bidirectional motor control configurations.
Its high voltage and current handling capabilities make it suitable for these applications.

Equivalent

The IRF610PBF is an N-channel MOSFET. Equivalent products include the IRF540, IRF610, and IRF620, which share similar specifications. Additionally, you might consider the STP16NF06, FQP30N06, or BSS138 for alternative options, though ensure to check voltage and current ratings for compatibility.

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