Изображения являются только для ссылки

IRF540PBF

Name: IRF540PBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 100V 28A TO220AB

Производитель
Мфр. Часть #IRF540PBF
Пакет TO-220AB
Лист данных
В наличии6513

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tube
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	100 V
Current-ContinuousDrain(Id)@25°C	28A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	77mOhm @ 17A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	72 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	1700 pF @ 25 V
PowerDissipation(Max)	150W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220AB

Обзор

Description

The IRF540PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its high efficiency and performance in switching applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 33A, making it suitable for various high-power applications such as motor control, power supplies, and audio amplifiers. The device has a low on-resistance (R_DS(on)) of around 0.044 ohms, which minimizes power loss during operation.
The IRF540PBF is designed for easy drive compatibility, with a gate threshold voltage (V_GS(th)) typically between 2V to 4V, allowing it to be controlled by standard logic levels. It comes in a TO-220 package, facilitating heat dissipation and integration into various circuit designs. As a RoHS-compliant component, it is also environmentally friendly. Overall, the IRF540PBF is a reliable choice for electronic designs requiring efficient power management and robust performance.

Features

The IRF540PBF is an N-channel MOSFET known for its high performance and efficiency in power applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: Continuous drain current (I_D) of up to 33A at 25°C.
3. R_DS(on): Low on-resistance of about 0.044 ohms, minimizing conduction losses.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing for efficient switching with low gate drive voltages.
5. Fast Switching: Suitable for high-frequency applications due to low gate charge (Q_g).
6. Package Type: Available in TO-220 and DPAK packages, facilitating easy heat dissipation.
7. Thermal Resistance: Low thermal resistance ensures effective heat management.
These attributes make the IRF540PBF ideal for applications such as power supplies, motor drivers, and other high-efficiency switching applications.

Package

The IRF540PBF is typically packaged in a TO-220 format, which is a type of through-hole package. This design allows for efficient heat dissipation and is commonly used in power applications.

Pinout

The IRF540PBF is an N-channel MOSFET with a total of 3 pins.
Pin Configuration:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here relative to the source turns the device on or off.
2. Drain (D): This pin is where the current flows out when the MOSFET is in the "on" state. It connects to the load.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It serves as the reference point for the gate voltage.
Functionality:
The IRF540PBF is designed for high-speed switching applications and can handle high currents (up to 33A) and high voltages (up to 100V). It features low on-resistance, which enhances efficiency in power management applications. This makes it suitable for various applications like motor control, power supplies, and DC-DC converters.
Overall, it is popular in electronic circuits for its reliability and performance.

Manufacturer

The IRF540PBF is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon specializes in power semiconductors, microcontrollers, and other advanced technologies used in various applications, including automotive, industrial, and consumer electronics. The company is headquartered in Neubiberg, Germany, and is known for its innovation in energy efficiency and performance in electronic components. Infineon plays a crucial role in enabling the transition to sustainable energy and smart mobility solutions.

Application

The IRF540PBF is an N-channel MOSFET primarily used in power applications such as DC-DC converters, motor drives, and switching power supplies. Its high efficiency and fast switching capabilities make it suitable for use in automotive, industrial, and consumer electronics. Additionally, it is utilized in audio amplifiers and other high-current applications where low on-resistance and high-speed switching are essential.

Equivalent

The IRF540PBF is an N-channel MOSFET. Equivalent products include:
1. IRF540N
2. STP40NF10
3. FQP50N06L
4. PSMN2R8-80BS
5. AOD520
Always check specifications for voltage, current, and RDS(on) to ensure compatibility.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.