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IRF530NSTRLPBF

Name: IRF530NSTRLPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 100V 17A D2PAK

Производитель
Мфр. Часть #IRF530NSTRLPBF
Пакет TO-263-3
Лист данных IRF530NSTRLPBF DataSheet
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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	HEXFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	100 V
Current-ContinuousDrain(Id)@25°C	17A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	90mOhm @ 9A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	37 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	920 pF @ 25 V
PowerDissipation(Max)	3.8W (Ta), 70W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D2PAK

Обзор

Description

The IRF530NSTRLPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 9.2A at a temperature of 25°C. The device is characterized by a low on-resistance (R_DS(on)) of approximately 0.5 ohms, which minimizes power loss during operation.
This MOSFET is used in various applications such as power management, motor control, and as a switch in DC-DC converters. Its enhanced robustness includes a gate threshold voltage (V_GS(th)) ranging between 2V to 4V, facilitating easy drive with standard logic levels. The IRF530NSTRLPBF is housed in a TO-220 package, providing effective thermal dissipation.
Being a part of the IRF family, the IRF530NSTRLPBF is known for its reliability and performance in demanding environments, making it a popular choice among engineers and designers looking for efficient electronic solutions.

Features

The IRF530NSTRLPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: Continuous drain current (I_D) of up to 9.2A, enabling it to handle significant load currents.
3. R_DS(on): A low on-resistance of around 0.37 ohms at V_GS of 10V, which reduces power loss and increases efficiency.
4. Gate Threshold Voltage: V_GS(th) typically ranging from 2V to 4V, allowing for effective gate drive with standard logic levels.
5. Package: Available in TO-220 and DPAK packages, providing flexibility in mounting and thermal management.
6. Fast Switching: Capable of high-speed switching for efficient operation in various applications, including power supplies and motor control.
These attributes make the IRF530NSTRLPBF suitable for a wide range of electronic applications, from automotive to industrial power management.

Package

The IRF530NSTRLPBF is packaged in a TO-220 form factor, which is a standard metal package designed for power applications. This package provides good thermal performance and is suitable for mounting on heat sinks.

Pinout

The IRF530NSTRLPBF is an N-channel MOSFET with a total of 3 pins. Its pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D) - The drain pin is where the current flows out of the MOSFET when it is in the ON state.
3. Source (S) - The source pin is where the current enters the MOSFET.
The IRF530 is commonly used for high-speed switching applications, such as power management in electronic devices. It can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 9.2A, making it suitable for various power-related applications.

Manufacturer

The manufacturer of the IRF530NSTRLPBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in the development and production of a wide range of semiconductor solutions. The company focuses on areas such as automotive, industrial power control, digital security, and IoT applications. Infineon is known for its expertise in power management, providing products that enhance energy efficiency and performance in various electronic applications. The IRF530NSTRLPBF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power electronics and switching applications.

Application

The IRF530NSTRLPBF is an N-channel MOSFET commonly used in power management applications. Its primary areas include switching power supplies, motor drivers, and DC-DC converters. It is also suitable for high-speed switching in industrial automation, lighting control, and audio amplification circuits due to its low on-resistance and high current handling capabilities.

Equivalent

Equivalent products for the IRF530NSTRLPBF include the IRF540, IRF840, and IRF320. These MOSFETs share similar specifications, such as voltage rating and current capacity, but may vary in RDS(on) and switching characteristics. Always check the datasheets for precise electrical parameters before substitution.

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