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IRF3315PBF

Name: IRF3315PBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 150V 23A TO220AB

Производитель
Мфр. Часть #IRF3315PBF
Пакет TO-220-3
Лист данных IRF3315PBF DataSheet
В наличии2569

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Спецификации

Package	Bulk,Tube
Series	HEXFET®
ProductStatus	Obsolete
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	150 V
Current-ContinuousDrain(Id)@25°C	23A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	70mOhm @ 12A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	95 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	1300 pF @ 25 V
PowerDissipation(Max)	94W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220AB

Обзор

Description

The IRF3315PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It features a low on-resistance (R_DS(on)) of approximately 5.3 mΩ at a gate-source voltage (V_GS) of 10V, allowing for minimal power loss and heat generation during operation. With a maximum drain-source voltage (V_DS) of 60V and continuous drain current (I_D) up to 110A, it is suitable for various applications, including power supplies, motor control, and DC-DC converters.
The device is housed in a TO-220 package, making it easy to mount on heatsinks for thermal management. It has a fast switching speed, which enhances its efficiency in switching applications. Additionally, the IRF3315PBF is RoHS-compliant, ensuring it meets environmental regulations concerning hazardous substances. Overall, the IRF3315PBF is an effective choice for high-performance electronic designs requiring robust power management.

Features

The IRF3315PBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
- V_DS (Drain-Source Voltage): 30V, suitable for various low-voltage applications.
- I_D (Continuous Drain Current): Up to 65A, allowing for high current handling.
- R_DS(on) (On-Resistance): Approximately 8.5 mΩ at V_GS = 10V, ensuring low power loss during operation.
- Gate Threshold Voltage (V_GS(th)): Ranges from 1V to 2.5V, allowing it to be driven by lower voltage logic levels.
- Fast Switching Speed: Ideal for applications in power management, motor control, and DC-DC converters.
- Package: Available in a TO-220 package, facilitating efficient heat dissipation.
- RoHS Compliant: Free from hazardous substances, making it suitable for environmentally friendly designs.
These features make the IRF3315PBF versatile for automotive, industrial, and consumer electronics applications.

Package

The IRF3315PBF is packaged in a TO-220 type package. This package is designed for power transistors and provides efficient heat dissipation, making it suitable for high-power applications.

Pinout

The IRF3315PBF is a N-channel MOSFET with a total of 5 pins. Its primary functions include switching and amplifying electronic signals in various applications, such as power management and motor control.
Pinout:
1. Gate (G) - Controls the MOSFET's operation; applying a voltage here turns it on.
2. Drain (D) - The output terminal where current flows out.
3. Source (S) - The terminal where current flows in; typically connected to ground in N-channel configurations.
4. Body Diode (integrated) - Allows current to flow from the source to drain when reverse-biased, providing inherent protection against reverse polarity.
Key Specifications:
- RDS(on): Low on-resistance for efficient power handling.
- VDS(max): High drain-source voltage capability.
- ID(max): Maximum continuous drain current rating.
This makes the IRF3315PBF suitable for various high-efficiency applications.

Manufacturer

The IRF3315PBF is manufactured by Infineon Technologies, a global semiconductor company. Infineon specializes in the development and production of a wide range of semiconductor solutions, including power management, automotive, industrial, and security technologies. The company is known for its expertise in power MOSFETs, which are used in various applications such as automotive electronics, renewable energy systems, and consumer electronics. Infineon is headquartered in Neubiberg, Germany, and operates worldwide, focusing on innovation and sustainability in the semiconductor industry.

Application

The IRF3315PBF is a N-channel MOSFET primarily used in power management applications such as DC-DC converters, motor drives, and power switching circuits. Its low on-resistance and high-speed switching capabilities make it suitable for applications in automotive systems, power supplies, and renewable energy systems. Additionally, it is utilized in consumer electronics for efficient power control and thermal management.

Equivalent

Equivalent products to the IRF3315PBF include the IRF3205, IRF3710, and STP75NF75. These MOSFETs share similar specifications, such as voltage ratings, current capacity, and on-resistance, making them suitable alternatives in various applications. Always verify the specific electrical characteristics to ensure compatibility in your circuit design.

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