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IRF300P226

Name: IRF300P226
Rating: 4.7 (12 reviews)

MOSFET N-CH 300V 100A TO247AC

Производитель
Мфр. Часть #IRF300P226
Пакет
Лист данных IRF300P226 DataSheet
В наличии8028

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Спецификации

Series	StrongIRFET™
Part Status	Discontinued at Digi-Key
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	19mOhm @ 45A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	191 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10030 pF @ 50 V
Power Dissipation (Max)	556W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3
Base Product Number	IRF300

Обзор

Description

The IRF300P226 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It features a low on-resistance, making it suitable for use in various electronic circuits, including power supplies, motor drivers, and converters. With a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of 40A, the IRF300P226 can handle significant power loads efficiently.
Its fast switching capabilities enable it to operate effectively in high-frequency applications. The device typically has a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, which allows for easy interfacing with microcontrollers and other low-voltage logic devices. The IRF300P226 is packaged in a TO-220 form factor, facilitating effective heat dissipation. Its robust construction and performance make it a popular choice among engineers and designers in various industrial and consumer applications.

Features

The IRF300P226 is an N-channel MOSFET known for its high efficiency and reliability in power applications. Key features include:
- Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 300V, making it suitable for high-voltage applications.
- Current Rating: The device supports continuous drain current (I_D) of up to 226A, providing robust performance in demanding environments.
- R_DS(on): It has a low on-state resistance, typically around 0.07 ohms, which minimizes power loss during operation.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient switching at lower voltages.
- Package Type: It is typically available in a TO-220 or similar package, facilitating easy heat dissipation.
- Applications: Commonly used in power supplies, motor drives, and DC-DC converters due to its high power handling and efficiency.
Overall, the IRF300P226 is an ideal choice for high-performance power management systems.

Package

The IRF300P226 is typically packaged in a TO-220 package type. This package is commonly used for power MOSFETs and provides good thermal performance and ease of mounting.

Pinout

The IRF300P226 is an N-channel MOSFET that typically comes in a TO-220 package. It has three pins, which serve the following functions:
1. Gate (G) - This pin controls the MOSFET's on/off state by applying a voltage. A positive voltage relative to the source will turn the device on.

2. Drain (D) - This pin is the terminal through which the load current flows when the MOSFET is in the on state.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply.
In summary, the IRF300P226 has a total of three pins: Gate, Drain, and Source, each serving a specific role in controlling and conducting electrical current.

Manufacturer

The IRF300P226 is manufactured by Infineon Technologies, a leading global semiconductor manufacturer. Infineon specializes in power semiconductors, microcontrollers, and other electronic components used in various applications, including automotive, industrial, and consumer electronics. The company focuses on developing innovative solutions for energy efficiency, mobility, and security. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon is known for its commitment to research and development, providing high-performance products that support the growing demand for smart technologies and sustainable energy solutions.

Application

The IRF300P226 is an N-channel MOSFET primarily used in power applications. Its application areas include motor control, power management in DC-DC converters, switching power supplies, and high-speed switching applications. It is also suitable for use in audio amplifiers and industrial automation systems due to its high efficiency and fast switching capabilities.

Equivalent

The IRF300P226 is a N-channel MOSFET. Equivalent products include the IRF320, IRF3205, and STP75NF75. Check specifications like voltage, current ratings, and package types to ensure compatibility. Always verify with the manufacturer’s datasheet for precise matching.

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