IRF135B203

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IRF135B203

MOSFET N-CH 135V 129A TO220-3

  • Производитель
  • Мфр. Часть #IRF135B203
  • Пакет
  • Лист данных IRF135B203 DataSheet
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Спецификации

Series StrongIRFET™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 135 V
Current - Continuous Drain (Id) @ 25°C 129A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.4mOhm @ 77A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9700 pF @ 50 V
Power Dissipation (Max) 441W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IRF135

Обзор

Description

The IRF135B203 is a high-performance N-channel MOSFET designed for power applications. It is characterized by its low on-resistance (R_DS(on)) and high-speed switching capabilities, making it suitable for various uses, including power management, DC-DC converters, and motor control. With a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) rating typically around 18A, it can handle substantial power loads.
The device features a robust gate threshold voltage, which allows for easy driving from standard logic levels. Its thermal performance is enhanced by a TO-220 package, facilitating effective heat dissipation. This makes the IRF135B203 ideal for applications requiring efficient power handling and reliability.
Overall, the IRF135B203 is a versatile component in modern electronic designs, offering efficiency and durability for demanding applications.

Features

The IRF135B203 is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 55V.
2. Current Rating: Capable of handling continuous drain current (I_D) of around 30A, making it suitable for power applications.
3. On-Resistance (R_DS(on)): Low on-resistance, typically around 0.05 ohms, ensuring efficient conduction and minimal heat generation during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2V to 4V, allowing it to be driven effectively with low-voltage logic levels.
5. Package Type: Available in various packages like TO-220 and DPAK, providing flexibility for different thermal and space requirements.
6. Fast Switching Speed: Designed for efficient switching, which enhances performance in power conversion applications.
7. Thermal Management: Adequate thermal resistance, facilitating heat dissipation for reliable performance.
These features make the IRF135B203 suitable for a variety of applications, including power supplies, motor controls, and DC-DC converters.

Package

The IRF135B203 is typically packaged in a TO-220 format. This package type features a metal tab for heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The IRF135B203 is a N-channel MOSFET with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation, allowing it to switch on or off based on the voltage applied.
2. Drain (D): This is the terminal through which the main current flows when the MOSFET is on. It connects to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in most applications.
The IRF135B203 is designed for applications that require efficient switching and high-speed performance. It typically features a low on-resistance and high breakdown voltage, making it suitable for power management and amplification tasks in various electronic circuits.

Manufacturer

The IRF135B203 is manufactured by Infineon Technologies, a leading global semiconductor manufacturer. Infineon specializes in a wide range of products including power semiconductors, microcontrollers, and sensors. The company is well-known for its innovations in various sectors such as automotive, industrial, and consumer electronics. Infineon focuses on providing solutions for efficient energy management, connectivity, and security, making it a key player in the semiconductor industry.

Application

The IRF135B203 is an N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor control, and switching power supplies. It is suitable for high-speed switching applications in industrial equipment, automotive systems, and consumer electronics. Additionally, it is employed in load switching and amplification circuits due to its efficient performance and thermal stability.

Equivalent

The IRF135B203 chip is a power MOSFET. Equivalent products include the IRF135, IRF140, IRF210, and other similar N-channel MOSFETs with comparable voltage and current ratings. Always check specific electrical characteristics and datasheets to ensure compatibility for your application.

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