Изображения являются только для ссылки

IRF1010EPBF

Name: IRF1010EPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 60V 84A TO220AB

Производитель
Мфр. Часть #IRF1010EPBF
Пакет TO-220AB
Лист данных IRF1010EPBF DataSheet
В наличии4905

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tube
Series	HEXFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	84A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	12mOhm @ 50A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	130 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	3210 pF @ 25 V
PowerDissipation(Max)	200W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220AB

Обзор

Description

The IRF1010EPBF is a N-channel MOSFET designed for power management applications. It features a low on-resistance, making it efficient for switching applications in power supplies and motor control circuits. The device can handle high voltages with a maximum drain-source voltage (Vds) rating of 100V and a continuous drain current (Id) of up to 50A at 25°C.
Key attributes include a fast switching speed, low gate threshold voltage, and the ability to operate in high-temperature environments, making it suitable for various high-performance electronic applications. The IRF1010EPBF is packaged in a TO-220 style, facilitating easy heat dissipation during operation. Additionally, it is fully RoHS compliant, indicating it meets environmental standards for hazardous substances. Its robust performance and reliability make it a popular choice among engineers for designing efficient and durable electronic circuits.

Features

The IRF1010EPBF is an N-channel MOSFET designed for high-performance power applications. Key features include:
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 100V.
2. Current Ratings: Continuous drain current (I_D) is rated up to 50A, making it suitable for high-current applications.
3. Gate Threshold Voltage: Typical gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient drive with lower gate voltages.
4. R_DS(on): Offers a low on-resistance of around 0.02 ohms (max), which helps to minimize power losses.
5. Fast Switching: Designed for fast switching speeds, enhancing efficiency in switching applications.
6. Package Type: Available in a TO-220 package, which facilitates good thermal management.
7. Applications: Ideal for use in power supplies, DC-DC converters, and motor control circuits.
These features make the IRF1010EPBF suitable for various applications in power electronics.

Package

The IRF1010EPBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation, making it suitable for high-power applications in electronics.

Pinout

The IRF1010EPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET by applying a voltage. It is responsible for turning the device on and off.
2. Drain (D): This pin is where the load current flows out of the MOSFET. It connects to the load in a typical application.
3. Source (S): This pin is the terminal through which the current enters the MOSFET. It usually connects to ground in low-side switching applications.
The IRF1010EPBF is designed for high-speed switching and can handle high currents and voltages, making it suitable for various applications in power management and motor control.

Manufacturer

The IRF1010EPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in developing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovative technologies in power electronics, particularly in MOSFETs and IGBTs, which are crucial for efficient energy conversion and management in various applications. Infineon also focuses on enabling the digitalization of industries and the automotive sector, contributing to advancements in areas like electric vehicles and IoT (Internet of Things).

Application

The IRF1010EPBF is a power MOSFET primarily used in applications such as DC-DC converters, motor drives, power management circuits, and switching power supplies. It is suitable for high-speed switching and can handle high voltage and current, making it ideal for automotive, industrial, and consumer electronics applications.

Equivalent

Equivalent products to the IRF1010EPBF include the IRF1010N, FQP50N06, and STP50NF06. These MOSFETs share similar voltage and current ratings, making them suitable substitutes. Always verify specific characteristics like threshold voltage and RDS(on) to ensure compatibility for your application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.