IR2110S

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IR2110S

IC GATE DRVR HALF-BRIDGE 16SOIC

  • Производитель
  • Мфр. Часть #IR2110S
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  • Лист данных IR2110S DataSheet
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Спецификации

Part Status Obsolete
Base Product Number IR2110
DigiKey Programmable Not Verified
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, MOSFET (N-Channel)
Voltage - Supply 3.3V ~ 20V
Logic Voltage - VIL, VIH 6V, 9.5V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 500 V
Rise / Fall Time (Typ) 25ns, 17ns
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOIC
Packaging Tube

Обзор

Description

The IR2110S is a high-voltage, high-speed power MOSFET and IGBT driver designed to drive the gates of N-channel power MOSFETs or IGBTs in half-bridge configurations. Manufactured by Infineon Technologies, it is known for its ability to operate at high voltages and efficiently control the switching of power devices.
Key features of the IR2110S include a floating channel for bootstrapping operation up to 600V, high-side and low-side output drivers, and a wide supply voltage range. It provides a typical output current capability of 2A, which ensures fast switching of power devices, minimizing transition losses. The driver also integrates undervoltage lockout for both high-side and low-side drivers, preventing faulty operation in low-voltage conditions.
The device is commonly used in motor control, power supplies, and inverter applications, where efficient and reliable switching of power transistors is crucial. Its robust design makes it suitable for demanding environments, offering protection features that enhance the reliability and performance of the power management system.

Features

The IR2110S is a high-voltage, high-speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. Key features include:
1. Floating Channel Capability: Can operate up to 500V, suitable for high-side configurations.
2. Gate Drive: Provides a 2.5A source and 2.5A sink current capability for both high-side and low-side outputs, ensuring fast switching times.
3. Logic Inputs: Compatible with standard logic levels; input thresholds are compatible with CMOS and TTL circuits.
4. Propagation Delay: Typically around 120ns, allowing for efficient operation in high-frequency applications.
5. Bootstrap Operation: Designed for bootstrap operation to supply the high-side driver, which simplifies the circuit design and reduces component count.
6. Under-Voltage Lockout (UVLO): Ensures that the driver outputs are inactive if the supply voltage is too low, protecting the system from malfunction.
7. Shoot-Through Prevention: Built-in circuitry prevents simultaneous conduction of high-side and low-side MOSFETs, improving system reliability.
8. Package: Available in a compact 14-pin SOIC package (IR2110S), making it suitable for space-constrained applications.
These features make the IR2110S suitable for various industrial and consumer applications, including motor drives, power supplies, and DC-DC converters.

Package

The IR2110S is typically available in a Surface Mount Device (SMD) package, specifically the 16-pin SOIC (Small Outline Integrated Circuit) package.

Pinout

The IR2110S is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It comes in a 14-pin package. Here is a concise breakdown of its pin functions:
1. VCC: Low side and logic fixed supply.
2. VB: High side floating supply.
3. HO: High side gate drive output.
4. VS: High side floating supply return.
5. VSS: Logic ground.
6. LO: Low side gate drive output.
7. COM: Low side return.
8. HIN: Logic input for high side gate driver.
9. LIN: Logic input for low side gate driver.
10. NC: No connection.
11. NC: No connection.
12. NC: No connection.
13. NC: No connection.
14. VDD: Logic supply voltage.
These pins facilitate the driver’s function to provide efficient switching of the power devices, enabling high-speed operation in various applications like motor drives and power converters.

Manufacturer

The IR2110S is manufactured by Infineon Technologies. Infineon is a leading global semiconductor company headquartered in Neubiberg, Germany. It specializes in a wide range of electronic components, including power semiconductors, microcontrollers, sensors, and security solutions. Originally, the IR2110S was developed by International Rectifier, a company known for its expertise in power management technology. However, International Rectifier was acquired by Infineon Technologies in 2015, and since then, its products, including the IR2110S, have been integrated into Infineon's portfolio. Infineon serves various markets such as automotive, industrial, and consumer electronics, focusing on innovation and energy efficiency.

Application

The IR2110S is a high-voltage, high-speed power MOSFET and IGBT driver designed for applications requiring efficient, reliable switching. It is commonly used in motor control systems, power inverters, switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), induction heating, and renewable energy systems like solar inverters. Its ability to drive high-side and low-side transistors makes it suitable for bridge configurations in various power conversion and control applications.

Equivalent

Equivalent products to the IR2110S gate driver chip include the IRS2110, FAN7382, MCP1407, and L6385. Each may have specific characteristics or performance differences, so it's important to review their datasheets to ensure compatibility with your application.

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