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IR2011S

Name: IR2011S
Rating: 4.7 (12 reviews)

IC GATE DRVR HI/LOW SIDE 8SOIC

Производитель
Мфр. Часть #IR2011S
Пакет
Лист данных IR2011S DataSheet
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Спецификации

Part Status	Obsolete
DigiKey Programmable	Not Verified
Driven Configuration	High-Side or Low-Side
Channel Type	Independent
Number of Drivers	2
Gate Type	MOSFET (N-Channel)
Voltage - Supply	10V ~ 20V
Logic Voltage - VIL, VIH	0.7V, 2.2V
Current - Peak Output (Source, Sink)	1A, 1A
Input Type	Inverting
High Side Voltage - Max (Bootstrap)	200 V
Rise / Fall Time (Typ)	35ns, 20ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC
Base Product Number	IR2011

Обзор

Description

"Introduction to IR2011S" typically refers to a course or module focusing on International Relations (IR), which examines the interactions between states, international organizations, non-governmental organizations, and other global actors. The course likely covers key theories of IR, such as realism, liberalism, and constructivism, as well as important concepts like power, sovereignty, conflict, and cooperation.
Students may explore historical contexts, current events, and case studies to understand how global issues such as war, diplomacy, trade, and human rights are addressed. The course may also emphasize critical thinking and analytical skills, encouraging students to engage with diverse perspectives and the complex nature of global politics.
Overall, IR2011S aims to provide foundational knowledge and analytical frameworks essential for understanding the dynamics of the international system and the challenges it faces in the contemporary world.

Features

The IR2011S is a high-speed, half-bridge driver designed for driving power MOSFETs and IGBTs in various applications. Key features include:
1. Voltage Range: Operates with a supply voltage of 10V to 20V.
2. Output Drive Capability: Capable of sourcing and sinking high current (up to 2A), allowing for rapid switching of connected power devices.
3. High-Speed Operation: Fast rise and fall times enable efficient and quick switching, which is essential for high-frequency applications.
4. Integrated Bootstrap Circuit: Supports high-side driving, allowing operation in configurations where the load is referenced to a higher voltage.
5. Fault Protection: Includes features such as under-voltage lockout (UVLO) to protect against low supply voltage conditions.
6. Isolation: Provides protection against noise and voltage spikes, enhancing reliability in demanding environments.
Overall, the IR2011S is widely used in motor control, power supplies, and inverter applications due to its robust performance and reliability.

Package

The IR2011S is typically packaged in a 8-pin SOIC (Small Outline Integrated Circuit) or a similar surface-mount package, designed for easy integration into electronic circuits.

Pinout

The IR2011S is a high and low side driver specifically designed for driving N-channel MOSFETs in half-bridge configurations. It has a total of 10 pins.
### Pin Count and Functions:
1. VS: High-side source voltage input.
2. VB: High-side gate drive supply.
3. HO: High-side gate output.
4. VCC: Logic supply voltage.
5. COM: Power ground reference.
6. LO: Low-side gate output.
7. VS: High-side source.
8. VBS: Bootstrap supply for high-side gate drive.
9. HIN: High-side input signal.
10. LIN: Low-side input signal.
### Key Functions:
- It provides gate drive signals for N-channel MOSFETs.
- The IR2011S features a bootstrap circuit for driving the high-side MOSFET.
- It has built-in protection features, including undervoltage lockout (UVLO) for both high-side and low-side drivers.
These features make the IR2011S suitable for motor control, power inverters, and switching power supplies.

Manufacturer

The IR2011S is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions and technologies, focusing on areas such as automotive, industrial power control, and security technologies. The company is known for its innovation in power management and energy efficiency, primarily serving markets that require high-performance electronic components. Infineon plays a significant role in the development of smart technologies and contributes to advancements in various sectors, including automotive electronics, renewable energy, and Internet of Things (IoT) applications.

Application

IR2011S is primarily used in industrial automation, robotics, and motor control applications. Its compact design and high efficiency make it suitable for driving brushless DC motors, stepper motors, and actuators. Additionally, it finds use in consumer electronics, HVAC systems, and electric vehicles, enhancing performance and reliability in various applications requiring precise motion control and energy management.

Equivalent

The IR2011S is a high voltage, high-speed driver typically used for driving MOSFETs and IGBTs. Equivalent products include the MIC4427, MCP14A, TC4420, and FAN7380. Always verify the specific application requirements, as parameters like input/output voltage, current ratings, and package types may vary.

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DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.