IPW65R150CFDA

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IPW65R150CFDA

MOSFETs AUTOMOTIVE_COOLMOS

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  • Мфр. Часть #IPW65R150CFDA
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  • Лист данных IPW65R150CFDA DataSheet
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Спецификации

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Description

The IPW65R150CFDA is a high-performance N-channel MOSFET designed for power management applications. It features a maximum drain-source voltage (VDS) of 650V and a continuous drain current (ID) rating of 150A, making it suitable for high-voltage switching applications. The device uses Infineon's CoolMOS technology, which enhances efficiency and reduces heat generation, making it ideal for use in power supplies, converters, and motor drives.
Key specifications include a low on-resistance (RDS(on)), which minimizes power loss during operation, and fast switching capabilities, contributing to high efficiency in energy conversion. It also has a built-in body diode, allowing for reverse current flow, which is beneficial in certain applications. The IPW65R150CFDA is typically packaged in a TO-247 housing, facilitating easy integration into various circuits.
Overall, this MOSFET is widely used in renewable energy systems, industrial applications, and electric vehicles due to its robust performance and reliability in demanding environments.

Features

The IPW65R150CFDA is a high-performance N-channel MOSFET designed for efficient power switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Capability: The device supports a continuous drain current (I_D) of 150A, providing robust performance in demanding conditions.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.15 ohms, which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient drive control.
5. Switching Speed: Optimized for fast switching, it reduces switching losses, making it ideal for applications like converters and inverters.
6. Thermal Performance: The device has a high thermal rating, facilitating effective heat dissipation and reliability.
These features make the IPW65R150CFDA suitable for use in power supplies, motor drives, and renewable energy systems.

Package

The IPW65R150CFDA is packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient thermal management and robustness in various electronic circuits.

Manufacturer

The IPW65R150CFDA is manufactured by Infineon Technologies, a German semiconductor company. Infineon specializes in the development and production of semiconductor and system solutions focused on efficiency, mobility, and security. The company serves various industries, including automotive, industrial power control, and communication. Infineon is well-known for its innovations in power management technologies, including MOSFETs, IGBTs, and integrated circuits, aimed at enhancing energy efficiency in electronic devices and systems.

Application

The IPW65R150CFDA is a CoolMOS™ power MOSFET, primarily used in high-efficiency applications such as switch-mode power supplies (SMPS), industrial power converters, and renewable energy systems like solar inverters. Its features enable efficient energy conversion, reduced switching losses, and improved thermal performance, making it suitable for electric vehicles, UPS systems, and other power electronics applications.

Equivalent

The IPW65R150CFDA is an N-channel MOSFET with a 650V rating and 150mΩ RDS(on). Equivalent products include the STP65NF75, IRF840, and FQD7N60. Ensure to check specific parameters like voltage, current ratings, and package type to confirm compatibility for your application.

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