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IPW60R180P7

Name: IPW60R180P7
Rating: 4.7 (12 reviews)

MOSFETs HIGH POWER_NEW

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Мфр. Часть #IPW60R180P7
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Лист данных IPW60R180P7 DataSheet
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Спецификации

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Description

The IPW60R180P7 is a high-voltage n-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. Its key specifications include a maximum drain-source voltage of 600V, a continuous drain current rating of 10A, and a low on-resistance (R_DS(on)) of approximately 0.18 ohms at 10V gate voltage. This MOSFET features fast switching capabilities, making it suitable for use in high-efficiency power supplies, motor drives, and various switching applications.
The IPW60R180P7 is housed in a TO-247 package, which allows for effective heat dissipation, making it ideal for applications requiring reliable thermal management. Its performance characteristics contribute to energy efficiency, reducing power loss and enhancing overall system reliability.
This device is often utilized in applications like renewable energy systems, industrial equipment, and consumer electronics where high voltage and efficiency are critical.

Features

The IPW60R180P7 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It has a maximum collector-emitter voltage (Vce) of 600V, making it suitable for high-voltage applications.
2. Current Rating: With a collector current (Ic) of up to 180A, it can handle significant power loads.
3. Low Switching Losses: The device exhibits low switching losses, which improves efficiency in inverter and converter applications.
4. Fast Switching Speed: It offers fast switching capabilities, enhancing performance in high-frequency applications.
5. Thermal Stability: The IPW60R180P7 has good thermal stability, allowing for reliable operation under varying temperatures.
6. Robust Packaging: Typically available in a TO-247 package, it's designed for easy installation and effective heat dissipation.
These features make the IPW60R180P7 ideal for applications such as motor drives, power inverters, and renewable energy systems.

Package

The IPW60R180P7 is packaged in a TO-247 format. This package type features a robust design suitable for high-power applications, providing excellent thermal management and ease of mounting on heatsinks.

Pinout

The IPW60R180P7 is a 600V N-channel MOSFET manufactured by Infineon Technologies. It comes in a TO-247 package, which typically has three pins.
Pin Count and Function:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin turns the device on, allowing current to flow between the Drain and Source.
2. Drain (D): This pin is the output terminal where the load is connected. Current flows from the Drain to the Source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the return path for the current.
In summary, the IPW60R180P7 has three pins: Gate, Drain, and Source, each serving a specific function in controlling and conducting electrical current.

Manufacturer

The IPW60R180P7 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in advanced semiconductor solutions for various applications, including automotive, industrial, and power management. The company is headquartered in Neubiberg, Germany, and is known for its innovations in power electronics, microcontrollers, and sensors. Infineon focuses on developing technologies that improve energy efficiency and support the transition to sustainable energy solutions.

Application

The IPW60R180P7 is an IGBT (Insulated Gate Bipolar Transistor) used in various applications, including motor drives, industrial power supplies, renewable energy systems (like solar inverters), and electric vehicles. Its features make it suitable for high efficiency and high voltage operations in power electronics, particularly in applications requiring fast switching and reduced power loss.

Equivalent

The IPW60R180P7 is a N-channel MOSFET. Equivalent products include the Infineon IPW60R190P7, Vishay Siliconix SIHF60N60 and the STMicroelectronics STP60NF06. Check the specifications for voltage, current ratings, and on-resistance to ensure compatibility for your application.

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