Изображения являются только для ссылки

IPW60R024P7

Name: IPW60R024P7
Rating: 4.7 (12 reviews)

MOSFETs HIGH POWER_NEW

Производитель
Мфр. Часть #IPW60R024P7
Пакет
Лист данных IPW60R024P7 DataSheet
В наличии3703

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Packaging

Tube

Обзор

Description

The IPW60R024P7 is a high-performance N-channel power MOSFET designed for various applications, including power management and switching. It features a maximum continuous drain current of 60A and a drain-source voltage rating of 600V, making it suitable for high-voltage applications. The device offers low on-resistance (R_DS(on)), which enhances efficiency and minimizes power losses during operation.
Key specifications include a low gate threshold voltage and fast switching capabilities, making it ideal for use in power supplies, motor drives, and industrial equipment. The IPW60R024P7 is part of Infineon's CoolMOS family, renowned for its superior thermal performance and reliability. Its TO-247 package allows for effective heat dissipation, important for maintaining performance under heavy loads.
Overall, the IPW60R024P7 is an optimal choice for designers seeking efficient and reliable MOSFET solutions in demanding high-voltage applications.

Features

The IPW60R024P7 is an N-channel MOSFET from Infineon, notable for its efficient performance in power applications. Key features include:
1. Voltage Rating: Capable of handling up to 600V, making it suitable for high-voltage applications.
2. Current Rating: Offers a continuous drain current of 60A, allowing it to manage significant power loads.
3. RDS(on): Low on-resistance of 0.024Ω at a gate voltage of 10V, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, facilitating easier drive control.
5. Packaging: Available in a TO-247 package, providing robust thermal performance and ease of mounting.
6. Fast Switching: Designed for fast switching applications, contributing to enhanced efficiency in power conversion circuits.
7. Applications: Commonly used in motor drives, industrial power supplies, and renewable energy systems.
Overall, the IPW60R024P7 is ideal for applications requiring high efficiency and reliability in power management.

Package

The IPW60R024P7 is packaged in a TO-247 casing. This package type is designed for high-power applications, providing efficient thermal performance and durability.

Pinout

The IPW60R024P7 is an N-channel MOSFET with a pin count of 5. Its primary functions include switching and amplification in power applications. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's operation by turning it on or off.
2. Drain (D): The terminal through which the current flows out of the device when it is in the on state.
3. Source (S): The terminal through which current enters the MOSFET when it is on.
The IPW60R024P7 is designed for high-voltage applications and features low on-resistance, making it suitable for various power electronics, including power supplies and motor drivers. It operates with a maximum drain-source voltage of 600V and can handle continuous drain current up to 60A.

Manufacturer

The manufacturer of the IPW60R024P7 is Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in the design and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and integrated circuits. Infineon plays a significant role in various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security. The IPW60R024P7 is a high-voltage power MOSFET used for applications that require efficient power management.

Application

The IPW60R024P7 is an IGBT (Insulated Gate Bipolar Transistor) used primarily in high-power applications such as motor drives, renewable energy systems (like solar inverters), industrial automation, and power supplies. Its high voltage and current handling capabilities make it suitable for applications requiring efficient switching and energy management.

Equivalent

The IPW60R024P7 is an N-channel MOSFET. Equivalent products include the IRF740, STP40NF06L, and FQP30N06L. Always verify specifications such as voltage, current ratings, and R_DS(on) to ensure compatibility for your specific application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.