Изображения являются только для ссылки

IPT60R102G7

Name: IPT60R102G7
Rating: 4.7 (12 reviews)

MOSFETs HIGH POWER_NEW

Производитель
Мфр. Часть #IPT60R102G7
Пакет
Лист данных IPT60R102G7 DataSheet
В наличии26941

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Packaging

Reel

Обзор

Description

The IPT60R102G7 is a high-performance IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies, designed for power applications. With a voltage rating of 600V and a current rating of 100A, it is suitable for a variety of applications, including inverters, motor drives, and power supplies. Its low saturation voltage and fast switching capabilities enhance efficiency, making it ideal for demanding environments.
The "G7" designation indicates that it belongs to Infineon's seventh generation of IGBTs, which offer improved thermal performance and reduced switching losses compared to earlier generations. The device features a robust package for effective thermal management and reliability.
Applications typically leverage the IPT60R102G7's characteristics for renewable energy systems, like solar inverters, and industrial automation, enabling efficient power conversion and control. Overall, its advanced features make it a popular choice among engineers seeking reliable and efficient power solutions.

Features

The IPT60R102G7 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various applications, including industrial motor drives and power inverters. Key features include:
1. Voltage Rating: Typically operates at 1200V, suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous collector current of up to 60A.
3. Low Switching Losses: Enhanced efficiency due to reduced switching losses, making it ideal for high-frequency applications.
4. Robust Thermal Performance: Designed to dissipate heat effectively, ensuring reliability in demanding environments.
5. Fast Switching Speed: Allows for rapid turn-on and turn-off, improving overall system performance.
6. Integrated Anti-Parallel Diode: Features a built-in diode for freewheeling operations, contributing to better circuit design flexibility.
These attributes make the IPT60R102G7 suitable for applications in renewable energy, UPS systems, and traction drives, where efficiency and reliability are critical.

Package

The IPT60R102G7 is packaged in a TO-247 type package. This package is commonly used for high-power applications, providing good thermal performance and suitability for mounting on heatsinks.

Pinout

The IPT60R102G7 is an N-channel MOSFET transistor manufactured by Infineon. It features a total of 5 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's operation by enabling or disabling current flow between the drain and source.
2. Drain (D) - The terminal through which the main current flows out when the device is turned on.
3. Source (S) - The terminal from which the current enters when the device is activated.
The IPT60R102G7 is designed for high-efficiency power conversion applications, such as inverters and motor drives, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 102A. Its low on-resistance makes it suitable for reducing power losses in switching applications.
For detailed specifications, always refer to the manufacturer's datasheet.

Manufacturer

The IPT60R102G7 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in the design and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. Infineon focuses on applications in key areas such as automotive, industrial, and Internet of Things (IoT) technologies, enabling intelligent and energy-efficient systems. The company plays a crucial role in enabling advancements in various sectors, including automotive electronics, renewable energy, and security technologies.

Application

The IPT60R102G7 is an IGBT (Insulated Gate Bipolar Transistor) suitable for various applications, including electric drives, power inverters, and industrial motor control. It is commonly used in renewable energy systems like solar and wind inverters, as well as in power supplies and UPS systems. Its high efficiency and fast switching capabilities make it ideal for applications requiring reliable performance in harsh environments.

Equivalent

Equivalent products to the IPT60R102G7 MOSFET include the IRF3205, STP75NF75, and FQP50N06L. Ensure to check specifications such as voltage, current ratings, and R_DS(on) for compatibility with your application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.