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IPP60R125P6

Name: IPP60R125P6
Rating: 4.7 (12 reviews)

Производитель
Мфр. Часть #IPP60R125P6
Пакет TO-220-3
Лист данных
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Спецификации

Technology	Si
Packaging	Tube
Brand	Infineon Technologies
Product Type	MOSFETs
Series	CoolMOS P6
Factory Pack Quantity:Factory Pack Quantity	500
Subcategory	Transistors
Part # Aliases	SP001114648 IPP60R125P6XKSA1
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Height	15.65 mm
Length	10 mm
Width	4.4 mm
Unit Weight	2 g
Configuration	Single
Tradename	CoolMOS
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	30 A
Rds On - Drain-Source Resistance	113 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3.5 V
Qg - Gate Charge	56 nC
Pd - Power Dissipation	219 W
Channel Mode	Enhancement
Fall Time	5 ns
Rise Time	9 ns
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	44 ns
Typical Turn-On Delay Time	14 ns
Package/Case	TO-220-3

Обзор

Description

The IPP60R125P6 is a high-performance N-channel MOSFET designed for various power applications. With a voltage rating of 125V and a continuous drain current of up to 60A, it is suitable for switching and amplification tasks in power management systems. The device features a low on-resistance (RDS(on)) of approximately 0.125 ohms, which minimizes power losses and enhances efficiency.
Key characteristics include fast switching speeds, making it ideal for applications in converters, inverters, and motor drives. The IPP60R125P6 is housed in a TO-220 package, allowing for effective heat dissipation and ease of mounting on heatsinks. Its robustness and reliability under high thermal and electrical stress make it a popular choice in automotive, industrial, and consumer electronics sectors.
Overall, the IPP60R125P6 is a versatile MOSFET that balances performance, efficiency, and thermal management, catering to a wide range of electronic applications.

Features

The IPP60R125P6 is an N-channel MOSFET from Infineon Technologies, designed for high-performance applications. Key features include:
1. Voltage Rating: Max V_DS of 600V, making it suitable for high-voltage applications.
2. Current Handling: Continuous drain current (I_D) up to 125A, allowing for robust power handling.
3. R_DS(on): Low on-resistance (approximately 0.125 ohms at V_GS = 10V), which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, enabling easy drive compatibility with low-voltage control signals.
5. Fast Switching: Designed for rapid switching speeds, beneficial for applications in power converters and inverters.
6. Package: Available in a TO-247 package, facilitating effective heat dissipation.
These features make the IPP60R125P6 ideal for applications in renewable energy systems, industrial motor drives, and other high-efficiency power electronic designs.

Package

The IPP60R125P6 is packaged in a TO-220 format. This package type is commonly used for power transistors and allows for efficient heat dissipation and easy mounting on heatsinks, making it suitable for high-power applications.

Pinout

The IPP60R125P6 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a total of 6 pins. Its primary function is to act as a switch or amplifier in electronic circuits, enabling control of high-power devices.
Pin Configuration:
1. Gate (G): Controls the MOSFET’s on/off state.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal through which the current enters the MOSFET.
The remaining pins are typically for thermal and mechanical support or may be used for specific applications. The IPP60R125P6 is designed to handle a maximum drain-source voltage of 125V and a continuous drain current of up to 60A, making it suitable for high-performance power applications such as converters and motor drives.

Manufacturer

The IPP60R125P6 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Founded in 1999 as a spin-off from Siemens AG, Infineon specializes in microelectronics and is known for its innovations in power semiconductors, automotive electronics, and security technologies. The company serves a variety of sectors, including automotive, industrial, and consumer electronics, and is recognized for its efforts in developing energy-efficient solutions. The IPP60R125P6 is a specific type of power MOSFET, used in applications that require efficient power management.

Application

The IPP60R125P6 is an N-channel power MOSFET primarily used in applications such as power supplies, motor drives, and DC-DC converters. Its high efficiency and fast switching capabilities make it suitable for automotive systems, renewable energy inverters, and industrial automation. Additionally, it can be utilized in electronic devices requiring efficient power management and thermal performance.

Equivalent

The IPP60R125P6 is an IGBT rated for 600V, 125A. Equivalent products include the STGW30H60, FGH60N60SMD, and IRG4PH60KD. When looking for substitutes, ensure similar voltage ratings, current capacities, and switching characteristics to maintain performance. Always consult datasheets for detailed specifications before making replacements.

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