IPP60R120P7

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IPP60R120P7

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Спецификации

Technology Si
Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors

Обзор

Description

The IPP60R120P7 is an N-channel power MOSFET designed for high-efficiency applications, particularly in power management and conversion. With a voltage rating of 120V and a continuous drain current of up to 60A, it is suitable for use in power supplies, motor drives, and other high-voltage circuits. The device features low on-resistance (RDS(on)), allowing for reduced conduction losses and improved thermal performance.
It is housed in a TO-220 package, which facilitates effective heat dissipation and easy mounting on heatsinks. Its fast switching speeds make it ideal for applications where rapid transitions are necessary, contributing to overall system efficiency.
The IPP60R120P7 is part of Infineon's product line, known for reliability and performance in demanding environments, making it a popular choice among engineers for various electronic designs. Always consult the datasheet for specific electrical characteristics and thermal performance details to ensure it meets the requirements of your application.

Features

The IPP60R120P7 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 60A, which allows for effective power management.
3. Low On-Resistance: It offers a low on-resistance (R_DS(on)) value, typically around 0.07 ohms, facilitating higher efficiency and reduced heat generation.
4. Fast Switching: The device supports fast switching speeds, making it ideal for applications like DC-DC converters and motor drives.
5. Thermal Performance: It has a robust thermal performance with a maximum junction temperature of 175°C, enabling reliable operation in demanding environments.
6. Package: Available in a TO-220 package, allowing for easy heat dissipation and PCB mounting.
Overall, the IPP60R120P7 is suitable for various applications in power electronics, including automotive, industrial, and consumer electronics.

Package

The IPP60R120P7 is packaged in a TO-247 format, which is a type of through-hole package designed for high power applications, providing good thermal performance and ease of mounting.

Pinout

The IPP60R120P7 is an N-channel MOSFET designed for high-efficiency applications. It comes in a TO-220 package with three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's switching behavior. Applying a voltage to this pin turns the MOSFET on or off.

2. Drain (D): This pin connects to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The IPP60R120P7 features a maximum drain-source voltage (VDS) of 120 V and a continuous drain current (ID) of up to 60 A, making it suitable for various power applications, including power supplies, motor drives, and converters.

Manufacturer

The IPP60R120P7 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in the development and production of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company focuses on providing innovative technologies in areas such as power management, automotive safety, and microcontrollers. Infineon is known for its commitment to sustainability and energy efficiency, making it a prominent player in the semiconductor industry.

Application

The IPP60R120P7 is an N-channel IGBT (Insulated Gate Bipolar Transistor) primarily used in industrial applications such as motor drives, power inverters, and renewable energy systems (like solar inverters). It is suitable for high-power switching applications due to its high voltage and current ratings, making it ideal for traction drives, induction heating, and energy conversion systems. Its efficient performance helps in improving energy efficiency and reducing thermal losses in various power electronics applications.

Equivalent

The IPP60R120P7 is a N-channel MOSFET with a 1200V rating and a 60A current capacity. Equivalent products include:
1. STP60NF120 (STMicroelectronics)
2. FGA60N120 (ON Semiconductor)
3. IRFB60R120 (Infineon)
4. APT60M120 (Microsemi)
Always verify specifications to ensure compatibility for your application.

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