Изображения являются только для ссылки

IPP320N20N3 G

Name: IPP320N20N3 G
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 200V 34A TO220-3 OptiMOS 3

Производитель
Мфр. Часть #IPP320N20N3 G
Пакет
Лист данных IPP320N20N3 G DataSheet
В наличии22142

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Packaging	Tube
Standard Pack Qty	500

Обзор

Description

The IPP320N20N3 G is a high-performance N-channel MOSFET designed for power management applications. It features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 320A, making it suitable for high-voltage and high-current applications. The device is particularly known for its low on-resistance (R_DS(on)), which enhances efficiency and reduces heat generation during operation.
This MOSFET is often used in power supplies, motor control, and other applications where efficient switching is crucial. It is packaged in a robust TO-247 format, allowing for effective heat dissipation and easy integration into various systems. The IPP320N20N3 G also includes fast switching capabilities, contributing to its effectiveness in high-frequency applications.
Overall, this component represents a reliable choice for engineers looking to optimize performance in demanding power electronic systems.

Features

The IPP320N20N3 G is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 320A, providing robust performance in demanding environments.
3. R_DS(on): Offers a low on-resistance (R_DS(on)), typically around 0.065 ohms, which minimizes power losses during operation.
4. Gate Charge: It features a low total gate charge (Q_g), allowing for faster switching speeds and improved efficiency in power conversion applications.
5. Thermal Performance: The device is designed with excellent thermal characteristics, including a high maximum junction temperature (T_J) of 175°C.
6. Package: It is available in a TO-220 package, facilitating effective heat dissipation and easy mounting.
These attributes make the IPP320N20N3 G ideal for applications like power supplies, motor drives, and inverters.

Package

The IPP320N20N3 G is typically packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is commonly used for power MOSFETs.

Pinout

The IPP320N20N3 G is a 20V N-channel MOSFET with a pin count of 3. Its pin configuration includes:
1. Gate (G) - This pin is used to control the MOSFET. An appropriate voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is connected to the load. The current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S) - This pin is connected to the ground or the lower potential in the circuit. Current flows out of the source when the MOSFET is turned on.
The IPP320N20N3 G is designed for applications requiring efficient switching and can handle high currents, making it suitable for power management in various electronic devices.

Manufacturer

The IPP320N20N3 G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in developing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. Infineon serves various industries, such as automotive, industrial, and consumer electronics, focusing on energy efficiency, connectivity, and security. The IPP320N20N3 G is a part of their power MOSFET product line, used in applications such as power management and conversion.

Application

The IPP320N20N3 G is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drives, and switching power supplies. Its high voltage and current ratings make it suitable for industrial automation, electric vehicles, and renewable energy systems. Additionally, it can be employed in consumer electronics for efficient power control and thermal management.

Equivalent

The IPP320N20N3 G is a N-channel MOSFET with a voltage rating of 200V and a current rating of 320A. Equivalent products include the Infineon IPB320N20N3 G, STMicroelectronics STP320N20N3, and ON Semiconductor NTMFS320N20. Always verify specifications such as RDS(on), gate charge, and thermal characteristics for compatibility.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.