Изображения являются только для ссылки

IPP076N15N5

Name: IPP076N15N5
Rating: 4.7 (12 reviews)

MOSFETs TRENCH >=100V

Производитель
Мфр. Часть #IPP076N15N5
Пакет
Лист данных IPP076N15N5 DataSheet
В наличии4859

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Packaging

Tube

Обзор

Description

IPP076N15N5 is a specific model of an Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. This device is designed for high-efficiency switching applications, commonly used in power electronics such as inverters, motor drives, and industrial power supplies. The "076" in the model number indicates its current handling capability, while "15" refers to its voltage rating of 1,500 volts. IGBTs like the IPP076N15N5 combine the easy drive characteristics of MOSFETs with the high-current and low-saturation voltage capabilities of bipolar transistors, making them ideal for high-power applications. The device features low on-state voltage, fast switching speed, and robust thermal performance, which contribute to overall system efficiency. Applications include renewable energy systems, electric vehicles, and other industrial applications requiring reliable and efficient power management.

Features

The IPP076N15N5 is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, allowing it to handle high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 76A, making it suitable for high-current applications.
3. R_DS(on): The on-resistance is typically low, around 0.076 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is in the range of 2V to 4V, facilitating easy driving with standard logic levels.
5. Fast Switching: Designed for high-speed switching, making it ideal for applications such as power converters, motor drives, and other switching power supplies.
6. Thermal Management: It has a maximum junction temperature of 175°C, allowing it to operate in demanding thermal environments.
Overall, the IPP076N15N5 is well-suited for high-power, efficient switching applications in various electronic circuits.

Package

The IPP076N15N5 is typically available in a TO-220 package type. This package features a metal tab for heat dissipation and facilitates mounting to heatsinks, making it suitable for power applications.

Pinout

The IPP076N15N5 is a power MOSFET with a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's conduction state by applying a voltage. When a sufficient voltage is applied to the gate relative to the source, the MOSFET turns on, allowing current to flow from drain to source.
2. Drain (D): This pin is the output of the device and is where the load current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in most applications, and it serves as the reference point for the gate voltage.
The IPP076N15N5 is designed for high-efficiency switching applications, providing low on-resistance and fast switching speeds, making it suitable for use in power management and conversion circuits.

Manufacturer

The IPP076N15N5 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in microelectronics, including power semiconductors, sensors, and automotive electronics. The company serves a broad range of industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency and smart technologies. Infineon is known for its innovation in power management and offers products that enable efficient energy use and sustainable solutions.

Application

The IPP076N15N5 is an N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, power supplies, motor drives, and audio amplifiers. It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching speed, making it ideal for renewable energy systems, electric vehicles, and high-performance computing.

Equivalent

The IPP076N15N5 is an N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and BSS123. Always verify specifications like voltage ratings, current capacity, and RDS(on) to ensure compatibility for your specific application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.