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IPP020N08N5

Name: IPP020N08N5
Rating: 4.7 (12 reviews)

Производитель
Мфр. Часть #IPP020N08N5
Пакет TO-220-3
Лист данных
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Спецификации

Technology	Si
Packaging	Tube
Brand	Infineon Technologies
Product Type	MOSFETs
Series	OptiMOS 5
Factory Pack Quantity:Factory Pack Quantity	500
Subcategory	Transistors
Part # Aliases	SP001132480 IPP020N08N5AKSA1
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Height	15.65 mm
Length	10 mm
Width	4.4 mm
Unit Weight	2 g
Configuration	Single
Tradename	OptiMOS
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	80 V
Id - Continuous Drain Current	120 A
Rds On - Drain-Source Resistance	1.8 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.2 V
Qg - Gate Charge	223 nC
Pd - Power Dissipation	375 W
Channel Mode	Enhancement
Fall Time	37 ns
Rise Time	36 ns
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	102 ns
Typical Turn-On Delay Time	40 ns
REACH - SVHC	Details
Forward Transconductance - Min	114 S
Package/Case	TO-220-3
Product	MOSFETs
Type	Power MOSFET

Обзор

Description

IPP020N08N5 is an N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for use in various applications, including switching power supplies, motor drives, and other high-efficiency power conversion systems.
Key specifications include a maximum drain-source voltage (Vds) of 80V, a continuous drain current (Id) rating of 20A, and a low on-resistance (Rds(on)) of approximately 0.020 ohms, which contributes to lower power losses during operation. This MOSFET features a robust thermal design, making it suitable for high-temperature environments.
The device is typically available in a TO-220 package, allowing for efficient heat dissipation. Its performance characteristics make it ideal for applications requiring high efficiency and fast switching speeds. Overall, the IPP020N08N5 is a reliable choice for engineers seeking effective solutions in power management and control.

Features

The IPP020N08N5 is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 20A, allowing it to manage significant loads.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)) of 0.020Ω, which minimizes power loss and enhances efficiency during operation.
4. Fast Switching: The MOSFET supports fast switching capabilities, ideal for applications in switching power supplies, converters, and motor control.
5. Thermal Management: It has a maximum junction temperature (T_J) of 150°C, enabling it to operate in demanding thermal environments.
6. Package Type: The device is available in a TO-220 package, facilitating easy heat dissipation and mounting.
These features make the IPP020N08N5 suitable for various applications in industrial, automotive, and consumer electronics.

Package

The IPP020N08N5 is packaged in a TO-220 format. This package type offers good thermal performance and is commonly used for power MOSFETs, allowing for efficient heat dissipation in various electronic applications.

Pinout

The IPP020N08N5 is a N-channel MOSFET from Infineon, featuring a pin count of 4. This device is designed for use in high-efficiency power applications, such as DC-DC converters, power management, and motor control.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which current flows out of the MOSFET when it is in the on state.
3. Source (S) - The terminal through which current enters the MOSFET; it is connected to the ground in typical configurations.
4. N/C (Not Connected) - This pin is not used and should not be connected to any circuit.
The IPP020N08N5 has a maximum drain-source voltage (V_DS) of 80V and can handle a continuous drain current (I_D) of up to 20A, making it suitable for various applications requiring efficient switching capabilities.

Manufacturer

The IPP020N08N5 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in various electronic components and solutions. The company focuses on power semiconductors, automotive, industrial, and IoT applications, among others. Infineon is known for its innovation in technologies like power management, automotive safety, and security solutions, serving a wide range of industries, including automotive, industrial, and consumer electronics.

Application

The IPP020N08N5 is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drivers, and power supply circuits. It is suitable for high-efficiency switching applications, such as in renewable energy systems, electric vehicles, and industrial automation. Its low on-resistance and fast switching capabilities make it ideal for reducing energy losses in various electronic devices.

Equivalent

The IPP020N08N5 is an N-channel MOSFET with a 80V rating and a continuous current of 20A. Equivalent products include the IRF3205, FQP50N80, and STP20NF08. Always check the datasheets for specific parameters such as RDS(on), gate threshold voltage, and package type to ensure compatibility for your application.

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