IPD80P03P4L-07

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IPD80P03P4L-07

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  • Мфр. Часть #IPD80P03P4L-07
  • Пакет
  • Лист данных IPD80P03P4L-07 DataSheet
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Спецификации

Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity:Factory Pack Quantity 2500
Technology Si
Shipping Restrictions Mouser does not presently sell this product in your region.
REACH - SVHC Details
Mounting Style SMD/SMT
Package / Case DPAK-3 (TO-252-3)
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 80 A
Rds On - Drain-Source Resistance 5.6 mOhms
Vgs - Gate-Source Voltage - 16 V, + 5 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 63 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 88 W
Channel Mode Enhancement
Tradename OptiMOS
Configuration Single
Fall Time 60 ns
Height 2.3 mm
Length 6.5 mm
Rise Time 4 ns
Series OptiMOS-P2
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 15 ns
Typical Turn-On Delay Time 8 ns
Width 6.22 mm
Part # Aliases SP000396296 IPD8P3P4L7XT IPD80P03P4L07ATMA1
Unit Weight 0.011640 oz
Qualification AEC-Q100

Обзор

Description

The IPD80P03P4L-07 is a Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of 80A. With a low on-resistance (R_DS(on)) of just 3.6 mΩ, it minimizes conduction losses, making it suitable for applications such as power supplies, motor drives, and DC-DC converters.
The device is built using advanced trench technology, which enhances its switching performance and thermal stability. Its fast switching speed reduces switching losses, contributing to higher overall efficiency in power management systems. The IPD80P03P4L-07 is housed in a TO-220 package, facilitating easy thermal management and heat dissipation.
Overall, the IPD80P03P4L-07 is an ideal choice for designers seeking reliable, efficient power solutions in consumer electronics, automotive, and industrial applications.

Features

The IPD80P03P4L-07 is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 80A, providing robust performance in power delivery.
3. R_DS(on): The on-resistance is typically low (around 4.5 mΩ), ensuring minimal power loss and heat generation during operation.
4. Fast Switching: Designed for quick switching speeds, making it ideal for applications such as DC-DC converters and power supplies.
5. Thermal Performance: The device features a TO-220 package, allowing for efficient heat dissipation and better thermal management.
6. Applications: Commonly used in automotive, industrial, and consumer electronics for motor control, power regulation, and load switching.
These features make the IPD80P03P4L-07 a versatile choice for various power management solutions.

Package

The IPD80P03P4L-07 is typically packaged in a DPAK (also known as TO-252) format. This package type is designed for surface mount applications and offers good thermal performance and power handling capabilities.

Pinout

The IPD80P03P4L-07 is a P-channel MOSFET with a pin count of 3. The pin configuration typically includes:
1. Gate (G): Used to control the MOSFET; applies the voltage to turn the device on or off.
2. Source (S): The terminal through which the current enters the MOSFET; connected to the higher voltage side in a P-channel configuration.
3. Drain (D): The terminal through which the current exits the MOSFET; connected to the load.
This MOSFET is designed for applications requiring efficient switching and power management, offering low on-resistance and fast switching capabilities. It is suitable for use in power supply circuits, motor control, and other applications where high efficiency is critical.

Manufacturer

The IPD80P03P4L-07 is manufactured by Infineon Technologies, a leading global semiconductor manufacturer. Infineon is headquartered in Neubiberg, Germany, and specializes in providing a wide range of semiconductor solutions, including power semiconductors, automotive electronics, and industrial automation components. The company focuses on innovation in areas such as energy efficiency, mobility, and security, serving diverse markets including automotive, industrial, and consumer electronics. Infineon is known for its commitment to quality and sustainability in its product offerings.

Application

The IPD80P03P4L-07 is a N-channel MOSFET primarily used in power management applications, such as DC-DC converters, motor control, and power switching. Its low on-resistance and high current handling make it suitable for applications in consumer electronics, automotive systems, and renewable energy systems. Additionally, it is often utilized in power supplies, battery management systems, and industrial automation for efficient energy conversion and regulation.

Equivalent

The IPD80P03P4L-07 is a N-channel MOSFET. Equivalent products include the STP80P3, IRF3205, and FQP30N06L. Always verify specifications like voltage, current ratings, and package type to ensure compatibility in your application.

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