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IPD70P04P4-09

Name: IPD70P04P4-09
Rating: 4.7 (12 reviews)

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Мфр. Часть #IPD70P04P4-09
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Спецификации

Technology	Si
Packaging	Reel
Brand	Infineon Technologies
Product Type	MOSFETs
Series	OptiMOS-P2
Factory Pack Quantity:Factory Pack Quantity	2500
Subcategory	Transistors
Part # Aliases	IPD7P4P49XT SP000709326 IPD70P04P409ATMA1
Shipping Restrictions	Mouser does not presently sell this product in your region.
Mounting Style	SMD/SMT
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Height	2.3 mm
Length	6.5 mm
Width	6.22 mm
Unit Weight	0.011640 oz
Package / Case	DPAK-3 (TO-252-3)
Configuration	Single
Tradename	OptiMOS
Transistor Polarity	P-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	73 A
Rds On - Drain-Source Resistance	8.9 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	54 nC
Pd - Power Dissipation	75 W
Channel Mode	Enhancement
Transistor Type	1 P-Channel
Qualification	AEC-Q100
REACH - SVHC	Details

Обзор

Description

The IPD70P04P4-09 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high efficiency in various applications, including power management and automotive systems. It features a maximum drain-source voltage of 40V and a continuous drain current rating of 70A, making it suitable for high-power applications.
This MOSFET is known for its low on-resistance, which minimizes power loss and heat generation during operation. It is often used in applications such as DC-DC converters, motor drivers, and power amplifiers. The device is housed in a TO-220 package, facilitating effective heat dissipation.
The IPD70P04P4-09 is characterized by its fast switching speeds and high thermal stability, enhancing its reliability in demanding environments. Its performance is optimized for efficiency, making it a popular choice among engineers looking for robust power solutions in modern electronic circuits.

Features

The IPD70P04P4-09 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-to-source voltage (Vds) of 40V, making it suitable for low to medium voltage applications.
2. Current Rating: The device can handle continuous drain currents up to 70A, enabling it to manage high power loads effectively.
3. RDS(on): It offers a low on-resistance of around 4 mΩ at a gate-source voltage (Vgs) of 10V, which minimizes power losses during operation.
4. Fast Switching: Its design allows for rapid switching speeds, ideal for applications such as DC-DC converters and motor drivers.
5. Thermal Performance: The MOSFET provides good thermal stability with a maximum junction temperature of 175°C, enhancing reliability.
6. Package: Typically available in a TO-220 or similar package, facilitating efficient heat dissipation.
This combination of features makes the IPD70P04P4-09 suitable for power management and switching applications in various electronic devices.

Package

The IPD70P04P4-09 is typically available in a DPAK (TO-252) package type. This package is designed for surface mounting and is known for its compact size and efficient thermal performance.

Pinout

The IPD70P04P4-09 is a N-channel MOSFET with a pin count of 6. Its primary functions include acting as a switch or amplifier in various electronic circuits. The device is commonly used in power management applications due to its low on-resistance and high current handling capabilities.
The pinout is typically as follows:
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The terminal where the current flows out.
3. Source (S) - The terminal where the current flows in.
4. Body (B) - Internal body diode; usually connected to the source terminal.
This MOSFET is designed for high-efficiency applications, including DC-DC converters, motor drivers, and power management systems. Its specifications include a maximum drain-source voltage (V_DS) of 40V and a maximum continuous drain current (I_D) of 70A, making it suitable for high-power applications.

Manufacturer

The IPD70P04P4-09 is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Infineon is known for designing and producing a wide range of products, including power semiconductors, microcontrollers, and sensors, which are used in automotive, industrial, and consumer electronics applications. The company focuses on providing innovative technologies that enhance energy efficiency, mobility, and security. With a strong emphasis on research and development, Infineon aims to drive advancements in the semiconductor industry and contribute to sustainable solutions.

Application

The IPD70P04P4-09 is a high-performance N-channel MOSFET commonly used in applications such as power management, DC-DC converters, and motor control. Its low on-resistance and high current handling make it suitable for automotive, industrial, and consumer electronics applications, including power supplies, battery management systems, and high-efficiency switching applications.

Equivalent

The IPD70P04P4-09 is a N-channel MOSFET. Equivalent products include the STP70P04, IRF3205, and FQD7N70C. When selecting an equivalent, ensure similar specifications such as voltage rating, current rating, and package type to maintain compatibility in your application. Always verify datasheets for precise comparisons.

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