IPD65R190C7

The IPD65R190C7 is a high-performance N-channel MOSFET designed for various applications, including power management and energy conversion. It features a maximum drain-source voltage (V_DS) of 65V and a continuous drain current (I_D) rating of up to 190A, making it suitable for high-power applications. The device showcases low on-resistance (R_DS(on)) characteristics, which enhances efficiency by minimizing conduction losses.
With a fast switching capability, the IPD65R190C7 is ideal for use in switching power supplies, motor drives, and DC-DC converters. The device is housed in a TO-247 package, ensuring robust thermal performance and ease of mounting in various circuit configurations.
Key specifications include a gate threshold voltage (V_GS(th)) range and a maximum gate-source voltage (V_GS) limit that support reliable operation within specified limits. Overall, the IPD65R190C7 is a versatile choice for designers seeking efficient and reliable MOSFET solutions in demanding applications.

The IPD65R190C7 is a N-channel power MOSFET designed for high-efficiency applications. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) up to 190A, allowing it to drive substantial loads.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 190 mΩ, which minimizes conduction losses and improves overall efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges between 2V to 4V, enabling easy driving with standard logic levels.
5. Fast Switching: The MOSFET is designed for fast switching applications, reducing switching losses and improving performance in converters and inverters.
6. Package: It is available in a TO-220 package, which facilitates effective heat dissipation.
These characteristics make the IPD65R190C7 suitable for various applications, including power supplies, motor drives, and inverter circuits.

The IPD65R190C7 is available in a TO-220 package type.

The IPD65R190C7 is an N-channel Power MOSFET with a pin count of 5. The pin configuration and functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. Applying a voltage here allows current to flow from drain to source.
2. Drain (D): The main current-carrying terminal of the MOSFET. It connects to the load.
3. Source (S): This pin is the return path for current flowing through the device, typically connected to ground or the negative side of the circuit.
4. Gate-Source (G-S): The gate-source voltage determines the ON/OFF state of the MOSFET.
5. Drain-Source (D-S): The voltage between drain and source influences the MOSFET's operational characteristics.
The IPD65R190C7 is designed for high efficiency and low conduction losses, making it suitable for applications like power conversion and motor control. It boasts a maximum drain-source voltage of 650V and a continuous drain current of up to 190A.

The IPD65R190C7 is manufactured by Infineon Technologies AG, a leading multinational semiconductor manufacturer based in Germany. Infineon specializes in developing and producing a wide range of semiconductor solutions, including products for automotive, industrial power control, and communication technologies. The company is known for its innovation in power semiconductors, particularly in applications such as electric vehicles, renewable energy, and energy-efficient power management. Infineon's expertise extends to integrated circuits and various types of power transistors, including IGBTs and MOSFETs.

The IPD65R190C7 is a high-performance N-channel MOSFET designed for applications such as power supplies, motor drives, and DC-DC converters. Its low on-resistance and high switching speed make it suitable for energy-efficient circuits, including inverters for renewable energy systems, electric vehicles, and industrial automation. Its robust thermal management allows for use in high-frequency and high-power applications.

The IPD65R190C7 is an N-channel MOSFET. Equivalent products include the IRF3205, IPD65R190C7, and STP65NF75. Always check the specifications for voltage, current ratings, and threshold voltage to ensure compatibility in your application.