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IPD60R380C6

Name: IPD60R380C6
Rating: 4.7 (12 reviews)

MOSFET N-CH 600V 10.6A TO252-3

Производитель
Мфр. Часть #IPD60R380C6
Пакет TO-252-3
Лист данных IPD60R380C6 DataSheet
В наличии7198

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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	CoolMOS™
ProductStatus	Discontinued at Digi-Key
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	600 V
Current-ContinuousDrain(Id)@25°C	10.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	380mOhm @ 3.8A, 10V
Vgs(th)(Max)@Id	3.5V @ 320µA
GateCharge(Qg)(Max)@Vgs	32 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	700 pF @ 100 V
PowerDissipation(Max)	83W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	PG-TO252-3

Обзор

Description

The IPD60R380C6 is a high-performance N-channel MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 60A, making it suitable for high-voltage applications. With a low on-state resistance (Rds(on)) of just 380 mOhms, it ensures efficient power delivery and minimal heat generation during operation.
Designed for use in power conversion applications, such as switching power supplies and motor drives, the IPD60R380C6 is optimized for high efficiency and fast switching speeds. This MOSFET is part of the CoolMOS™ series, which is known for its advanced technologies that improve performance and reliability.
The device is available in a TO-247 package, which provides effective thermal management and ease of handling. Overall, the IPD60R380C6 is ideal for engineers looking for robust solutions for demanding power electronics applications.

Features

The IPD60R380C6 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: 600V, making it suitable for high-voltage applications.
2. Current Rating: 60A continuous drain current, facilitating robust performance in demanding scenarios.
3. RDS(on): Low on-resistance of 0.38 ohms at a gate-source voltage of 10V, leading to reduced conduction losses.
4. Fast Switching: Optimized for high-speed switching, which enhances efficiency in power conversion applications.
5. Package Type: Available in a TO-247 package, allowing for effective heat dissipation and ease of mounting.
6. Applications: Ideal for use in power supplies, motor drives, and inverters, particularly in renewable energy systems.
These features make the IPD60R380C6 a reliable choice for engineers seeking performance in high-voltage and high-current applications.

Package

The IPD60R380C6 is packaged in a TO-247 format, which is a plastic power package commonly used for high-power applications. This package type provides efficient thermal management and is suitable for mounting on heatsinks.

Pinout

The IPD60R380C6 is an N-channel power MOSFET with a pin count of 6. It is designed for applications such as power management and switching. The device features a drain-source voltage (V_DS) rating of 600V and a continuous drain current (I_D) of 38A, making it suitable for high-voltage and high-current applications.
The pin configuration typically includes:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the load current flows.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
4. Gate Source (G-S) - For controlling the gate voltage.
5. Drain Source (D-S) - For connecting the MOSFET in the circuit.
This configuration allows for efficient switching and amplification in various electronic circuits. Always refer to the manufacturer's datasheet for precise pin assignments and additional specifications.

Manufacturer

The IPD60R380C6 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company focuses on power management, smart card, sensor, and security solutions, and is recognized for its innovations in power semiconductor technologies, such as MOSFETs and IGBTs. Infineon plays a significant role in the development of energy-efficient solutions and is committed to sustainability in electronics.

Application

The IPD60R380C6 is a 600V N-channel MOSFET commonly used in power electronics applications. Its primary areas include electric vehicles, renewable energy systems such as solar inverters, industrial motor drives, and power supplies. Additionally, it is suitable for switch mode power supplies (SMPS) and high-frequency applications due to its low on-resistance and fast switching capabilities.

Equivalent

The IPD60R380C6 is a N-channel MOSFET. Equivalent products include the IRF3205, STP60NF06, and BUK956-100A. Always check the datasheets for specifications like voltage, current ratings, and Rds(on) to ensure compatibility in your application.

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