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IPD60N10S4L-12

Name: IPD60N10S4L-12
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 100V 60A DPAK-2

Производитель
Мфр. Часть #IPD60N10S4L-12
Пакет
Лист данных IPD60N10S4L-12 DataSheet
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Спецификации

Packaging	MouseReel
Standard Pack Qty	2500

Обзор

Description

The IPD60N10S4L-12 is an N-channel MOSFET designed for high-efficiency power applications. It features a voltage rating of 100V and a continuous drain current of up to 60A, making it suitable for demanding tasks like power supplies, motor drives, and switching applications.
Key specifications include a low on-resistance (RDS(on)), which minimizes power loss during operation and improves thermal performance. This MOSFET also boasts a fast switching speed, enhancing efficiency and reducing switching losses in high-frequency applications.
The IPD60N10S4L-12 is housed in a robust TO-220 package that facilitates effective heat dissipation, ensuring reliable operation under high loads. Its compatibility with standard gate drive voltages allows for easy integration into existing circuits.
Overall, the IPD60N10S4L-12 is ideal for engineers seeking high-performance semiconductor solutions in power management and conversion systems.

Features

The IPD60N10S4L-12 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 100V, making it suitable for a variety of power applications.
2. Current Handling: With a continuous drain current (I_D) rating of 60A, it is capable of handling substantial loads.
3. R_DS(on): The on-resistance is low (typically around 10 mΩ), which minimizes power losses and enhances efficiency during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring it can be easily driven by standard logic levels.
5. Package Type: It comes in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching: Optimized for quick switching applications, making it suitable for power supplies, motor drives, and DC-DC converters.
Overall, the IPD60N10S4L-12 is ideal for applications requiring high performance and efficiency in power management.

Package

The IPD60N10S4L-12 is typically packaged in a TO-220 format. This package type is widely used for power MOSFETs, providing good thermal performance and ease of mounting for heat dissipation.

Pinout

The IPD60N10S4L-12 is an N-channel MOSFET designed for power applications. It features a TO-247 package with a pin count of 4. The pin functions are as follows:
1. Gate (G): Used to control the MOSFET's switching.
2. Drain (D): The terminal through which the load current flows; it connects to the load or power supply.
3. Source (S): The terminal that connects to ground or the negative side of the circuit.
4. Gate-Source (G-S): This configuration may sometimes use an additional pin for more robust switching or for thermal management in specific layouts.
This device is suitable for various applications, including automotive, industrial, and high-efficiency power supplies.

Manufacturer

The IPD60N10S4L-12 is manufactured by Infineon Technologies AG, a leading global semiconductor company based in Germany. Infineon specializes in providing semiconductor and system solutions focused on automotive, industrial power control, and security technology. The company is known for its innovation in power management and efficiency, playing a crucial role in various applications such as automotive electronics, renewable energy systems, and IoT devices. Infineon’s products are widely used across multiple industries, making it a key player in the global electronics market.

Application

The IPD60N10S4L-12 is a high-voltage MOSFET primarily used in power electronics applications, such as power supplies, motor drives, and automotive systems. Its features make it suitable for DC-DC converters, inverters, and energy-efficient switch-mode power supplies. Additionally, it can be utilized in renewable energy systems and industrial automation for efficient power management.

Equivalent

Equivalent products to the IPD60N10S4L-12 MOSFET include the STP60NF10, IRFZ44N, and FQP60N10. Ensure to check specifications such as voltage, current ratings, and gate threshold voltage for compatibility before substitution.

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