Изображения являются только для ссылки

IPD530N15N3 G

Name: IPD530N15N3 G
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 150V 21A DPAK-2 OptiMOS 3

Производитель
Мфр. Часть #IPD530N15N3 G
Пакет
Лист данных IPD530N15N3 G DataSheet
В наличии27632

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Packaging	MouseReel
Standard Pack Qty	2500

Обзор

Description

The IPD530N15N3 G is a power MOSFET designed for high-efficiency applications, particularly in power management and conversion circuits. It features a maximum drain-source voltage of 150V and a continuous drain current rating of 53A, making it suitable for various power electronic applications. The device is built on advanced technology to minimize on-state resistance (RDS(on)), enhancing its efficiency and thermal performance.
It typically includes a TO-220 package, which allows for easier heat dissipation and mounting, critical in high-power setups. The IPD530N15N3 G is commonly used in switch-mode power supplies, motor drives, and other applications requiring reliable and efficient switching. Its fast switching capabilities also make it suitable for high-frequency operations. Overall, this MOSFET is a key component for engineers looking to optimize their circuit designs for performance and efficiency.

Features

The IPD530N15N3 is an N-channel Power MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 150V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle continuous drain currents up to 53A, depending on the thermal conditions and package.
3. Low On-Resistance: It offers a low RDS(on) of around 0.25 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching: Designed for high-speed switching applications, it provides fast turn-on and turn-off characteristics.
5. Thermal Performance: Comes in a TO-220 package, facilitating effective heat dissipation and thermal management.
6. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) is typically between 2-4V, enabling low-voltage drive capabilities.
These features make the IPD530N15N3 suitable for various applications, including power supplies, motor drives, and automotive systems.

Package

The IPD530N15N3 G is typically packaged in a TO-220 form factor, which is a three-terminal device package commonly used for power transistors. This package allows for efficient heat dissipation and is suitable for high-power applications.

Pinout

The IPD530N15N3 G is an N-channel MOSFET with a pin count of 4. Its pin configuration typically includes:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where current flows out of the device.
3. Source (S): The input terminal where current enters the device.
4. Body (B): Internally connected to the source; usually not externally connected.
The IPD530N15N3 G is designed for high-efficiency applications, offering low on-resistance and fast switching capabilities, making it suitable for power management and automotive applications.

Manufacturer

The IPD530N15N3 G is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in designing and producing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its innovations in power management, automotive safety, and communication technologies, contributing significantly to the development of energy-efficient and reliable electronic systems. Infineon serves a wide range of industries, leveraging its expertise in semiconductor technology to address the growing demands for efficiency and performance in electronic devices.

Application

The IPD530N15N3 G is an N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, power supplies, motor drives, and automotive systems. It is suitable for high-efficiency switching applications, including renewable energy systems and electric vehicles, due to its low on-resistance and fast switching capabilities.

Equivalent

The IPD530N15N3 G is an N-channel MOSFET with a 15V rating and low Rds(on). Equivalent products include the IRF540N, STP55NF06, and BSS140. When selecting an alternative, ensure the voltage rating, current handling, and Rds(on) match your application requirements. Always verify the specifications to ensure compatibility.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.