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IPD320N20N3 G

Name: IPD320N20N3 G
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 200V 34A DPAK-2 OptiMOS 3

Производитель
Мфр. Часть #IPD320N20N3 G
Пакет
Лист данных IPD320N20N3 G DataSheet
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Спецификации

Packaging	MouseReel
Standard Pack Qty	2500

Обзор

Description

The IPD320N20N3 G is a Power MOSFET designed for high-efficiency applications, particularly in power management and conversion systems. It features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) rating of 320A, making it suitable for high-voltage and high-current environments.
This MOSFET utilizes advanced trench technology, providing low on-resistance (R_DS(on)), which minimizes power losses during operation. Its fast switching capabilities enhance efficiency in switching applications, such as power supplies, motor drives, and inverter systems.
The device is housed in a TO-220 package, facilitating easy thermal management and mounting. Key specifications include a low gate threshold voltage and robust thermal performance, making it reliable under various operating conditions.
Overall, the IPD320N20N3 G is a versatile component ideal for engineers seeking efficient and reliable solutions in power electronics applications.

Features

The IPD320N20N3 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 320A, allowing for significant power handling.
3. R_DS(on): This MOSFET exhibits a low on-resistance (R_DS(on)), typically around 20 mΩ, which reduces conduction losses and enhances efficiency.
4. Thermal Performance: With a thermal resistance (RθJA) that promotes effective heat dissipation, it is suitable for applications requiring reliable thermal management.
5. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is designed for efficient switching, typically around 2-4V.
6. Applications: Ideal for use in power supplies, motor drives, and automotive systems.
Overall, the IPD320N20N3 is tailored for demanding power applications, providing robust performance and efficiency.

Package

The IPD320N20N3 G is typically packaged in a TO-220 format, which is a common packaging type for power MOSFETs. This package allows for efficient heat dissipation and easy mounting on heatsinks, making it suitable for high-power applications.

Pinout

The IPD320N20N3 G is a N-channel MOSFET with a pin count of 5. Its primary functions are to serve as a power switch and to manage high current and voltage applications efficiently. The key pins are:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - Connects to the load; it carries the current when the device is on.
3. Source (S) - Connects to the ground or the lower potential in the circuit.
This MOSFET is designed for applications requiring high efficiency and performance, such as in power supply circuits, motor drives, and other power management solutions. Its specifications include a maximum drain-source voltage (Vds) of 20V, a continuous drain current (Id) of 320A, and low on-resistance (Rds(on)) to minimize power loss.

Manufacturer

The IPD320N20N3 G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security solutions. Infineon serves various industries such as automotive, industrial, and consumer electronics, focusing on applications that require efficient power management and advanced semiconductor technology. They are well-known for their innovations in power electronics, particularly in the areas of energy efficiency and renewable energy solutions.

Application

The IPD320N20N3 G is an N-channel MOSFET primarily used in power management applications, including switch-mode power supplies, motor drives, and automotive power circuits. It is ideal for high-efficiency DC-DC converters, inverters, and other applications requiring fast switching and low conduction losses. Additionally, it can be employed in consumer electronics and industrial equipment for efficient power switching and control.

Equivalent

The IPD320N20N3 G is a 20V, 320A N-channel MOSFET. Equivalent products include:
1. STP320N20-3 (STMicroelectronics)
2. IRF320 (Infineon)
3. APT320N20 (APT)
4. FDS320N20 (Fairchild)
Always verify specifications for exact equivalencies, as variations in Rds(on), threshold voltage, and package type may exist.

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