IPD30N08S2L-21

Изображения являются только для ссылки

IPD30N08S2L-21

MOSFETs N-Ch 75V 30A DPAK-2 OptiMOS

  • Производитель
  • Мфр. Часть #IPD30N08S2L-21
  • Пакет
  • Лист данных IPD30N08S2L-21 DataSheet
  • В наличии5013

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Packaging MouseReel
Standard Pack Qty 2500

Обзор

Description

The IPD30N08S2L-21 is a N-channel MOSFET designed for power management applications. It features a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of 30A, making it suitable for high-efficiency switching and power conversion tasks. The device is optimized for low on-resistance (R_DS(on)), which reduces power losses during operation.
Key specifications include a threshold voltage (V_GS(th)) range that ensures reliable switching at various gate voltages, and a fast switching speed that helps improve the overall performance in applications like power supplies, motor drivers, and converters. Additionally, it comes in a TO-220 package, facilitating efficient heat dissipation.
The IPD30N08S2L-21's robust design and reliable performance make it a popular choice in industrial, automotive, and consumer electronics sectors where efficiency and thermal management are critical.

Features

The IPD30N08S2L-21 is an N-channel MOSFET optimized for high-efficiency applications. Key features include:
1. Voltage Rating: 80V, suitable for various power supply applications.
2. Current Rating: Max continuous drain current of 30A, allowing for high power handling.
3. On-Resistance (RDS(on)): Low on-resistance of about 0.018Ω at VGS = 10V, which minimizes conduction losses.
4. Gate Threshold Voltage (VGS(th)): Typically around 2V to 4V, providing good drive characteristics.
5. Fast Switching: Optimized for rapid switching, reducing switching losses in power applications.
6. Package Type: Available in TO-220 package, allowing for effective thermal management.
7. Reliability: Designed for robustness in high-temperature environments.
These features make the IPD30N08S2L-21 suitable for applications such as power supplies, motor drives, and other high-efficiency switching applications.

Package

The IPD30N08S2L-21 is packaged in a DPAK (also known as TO-252) format. This package type is designed for surface mounting and provides efficient thermal performance and compact size for power MOSFET applications.

Pinout

The IPD30N08S2L-21 is an N-channel MOSFET with a pin count of 5. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow between the Drain and Source.
2. Drain (D): This pin is where the load current flows out of the MOSFET.
3. Source (S): This pin is connected to ground or the lower potential side of the circuit. The current flows into this pin from the Drain when the MOSFET is turned on.
4. Tab/Heatsink: Typically used for thermal management and connected to the Source for heat dissipation.
The IPD30N08S2L-21 is designed for high-efficiency applications, capable of handling a maximum continuous drain current of 30A and a maximum drain-source voltage of 80V. It is commonly used in power management and switching applications.

Manufacturer

The IPD30N08S2L-21 is manufactured by Infineon Technologies, a leading global semiconductor company. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon specializes in developing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security. Infineon is recognized for its innovative technologies and commitment to sustainability, making it a key player in the semiconductor market.

Application

The IPD30N08S2L-21 is an N-channel MOSFET commonly used in power management applications such as DC-DC converters, motor drivers, and inverter circuits. Its high voltage rating and low on-resistance make it suitable for applications in automotive electronics, industrial power supplies, and renewable energy systems like solar inverters. Additionally, it can be utilized in consumer electronics for efficient power switching.

Equivalent

The IPD30N08S2L-21 is an N-channel MOSFET. Equivalent products include the IRF3205, STP30NF08, and BUK7YF30-55. Always verify specifications such as voltage, current ratings, and Rds(on) to ensure compatibility for your specific application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.


Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.

Платежи

Payment Methods

Срок оплаты 100% предоплаченный.

В настоящее время мы принимаем только следующие способы оплаты:

1. PayPal

2. Кредитная/ дебетовая карта

3. Перевод банковских средств