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IPD30N06S2L-23

Name: IPD30N06S2L-23
Rating: 4.7 (12 reviews)

IPD30N06 - 55V-60V N-CHANNEL AUT

Производитель
Мфр. Часть #IPD30N06S2L-23
Пакет TO-252-3,DPak(2Leads+Tab),SC-63
Лист данных IPD30N06S2L-23 DataSheet
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Спецификации

Package	Bulk
Series	OptiMOS™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	55 V
Current-ContinuousDrain(Id)@25°C	30A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	23mOhm @ 22A, 10V
Vgs(th)(Max)@Id	2V @ 50µA
GateCharge(Qg)(Max)@Vgs	42 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	1091 pF @ 25 V
PowerDissipation(Max)	100W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	PG-TO252-3-11

Обзор

Description

The IPD30N06S2L-23 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. With a maximum drain-source voltage of 60V and a continuous drain current rating of 30A, it is suitable for use in applications such as power management, motor control, and switching regulators.
Key features include a low on-resistance (R_DS(on)), which reduces power losses during operation, and a fast switching speed, enhancing performance in various electronic circuits. This MOSFET is housed in a TO-220 package, facilitating easy heat dissipation and PCB integration.
Its gate threshold voltage allows for direct interfacing with standard logic-level signals, making it versatile for various control systems. The IPD30N06S2L-23 is widely used in automotive, industrial, and consumer electronics, where reliability and efficiency are critical.
Overall, this device is a robust choice for designers seeking to optimize power efficiency in their electronic designs.

Features

The IPD30N06S2L-23 is a N-channel Power MOSFET designed for high efficiency and performance in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for a wide range of applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 30A, allowing it to manage significant loads.
3. On-Resistance: The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate voltage of 10V, which minimizes power losses during operation.
4. Gate Threshold Voltage: It features a low gate threshold voltage, enhancing drive capability and reducing power requirements.
5. Thermal Performance: The package is optimized for thermal management, ensuring reliable operation under high load conditions.
6. Package Type: Available in a TO-220 package, it is designed for easy heat dissipation and PCB mounting.
These features make the IPD30N06S2L-23 ideal for applications in power management, motor control, and switching circuits.

Package

The IPD30N06S2L-23 is typically packaged in a TO-220 format, which is a type of through-hole package designed for power devices. This package provides good thermal performance and is suitable for heat dissipation in high-power applications.

Pinout

The IPD30N06S2L-23 is an N-channel MOSFET designed for power applications. It has a total of 5 pins. The pin configuration and functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D) - This pin allows current to flow out of the MOSFET when it is in the 'on' state.
3. Source (S) - This pin serves as the return path for the current flowing through the MOSFET.
The remaining pins are typically used for thermal management and packaging purposes, such as a tab or additional connection points for heat dissipation. The device can handle a maximum drain current of 30A and has a voltage rating of 60V, making it suitable for various power management tasks in electronic circuits.

Manufacturer

The manufacturer of the IPD30N06S2L-23 is Infineon Technologies AG. Infineon is a global semiconductor company based in Germany, specializing in semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. Founded in 1999 as a spin-off from Siemens AG, Infineon focuses on power management, microcontrollers, and security technologies. The company is known for its innovation in power semiconductors, particularly in energy-efficient solutions, and plays a significant role in the development of technologies for sustainable energy management and smart mobility. Infineon operates worldwide, providing advanced semiconductor products to a diverse range of industries.

Application

The IPD30N06S2L-23 is an N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor drives, and power switches in industrial equipment. Additionally, it is suitable for applications in LED lighting, battery management systems, and home appliances, where efficient switching and thermal performance are crucial.

Equivalent

The IPD30N06S2L-23 is an N-channel MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 30A. Equivalent products include:
1. IRF320
2. STP30NF06L
3. BSS123
4. FQP30N06L
Always verify specifications such as V_DS, I_D, R_DS(on), and package type to ensure compatibility.

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