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IPD30N06S2L-13

Name: IPD30N06S2L-13
Rating: 4.7 (12 reviews)

MOSFET N-CH 55V 30A TO252-3

Производитель
Мфр. Часть #IPD30N06S2L-13
Пакет TO-252
Лист данных IPD30N06S2L-13 DataSheet
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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	OptiMOS™
ProductStatus	Discontinued at Digi-Key
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	55 V
Current-ContinuousDrain(Id)@25°C	30A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	13mOhm @ 30A, 10V
Vgs(th)(Max)@Id	2V @ 80µA
GateCharge(Qg)(Max)@Vgs	69 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	1800 pF @ 25 V
PowerDissipation(Max)	136W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	PG-TO252-3-11

Обзор

Description

The IPD30N06S2L-13 is a N-channel MOSFET designed for power management applications. With a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 30A, it is suitable for high-efficiency switching applications such as power supplies, motor drivers, and DC-DC converters. The device features a low on-resistance (Rds(on)) of around 0.025 ohms, which minimizes power loss and heat generation during operation.
This MOSFET is housed in a TO-220 package, facilitating effective heat dissipation and making it suitable for compact designs. Its fast switching characteristics enable high-frequency operation, which is essential for modern power electronics. The IPD30N06S2L-13 is designed to handle significant power loads, ensuring reliability and performance in demanding environments.
Overall, it is a versatile component widely used in various applications, including automotive, industrial, and consumer electronics, due to its robust performance and efficiency.

Features

The IPD30N06S2L-13 is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 30A, allowing it to drive significant loads.
3. R_DS(on): Low on-resistance (typically around 0.018 ohms), which helps reduce power loss and improves efficiency in switching applications.
4. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)) typically around 2-4V, enabling effective drive with lower voltage levels.
5. Package Type: Comes in a TO-220 package, offering good thermal performance and ease of heat dissipation.
6. Fast Switching: Suitable for fast switching applications due to its low gate charge (Q_g), enhancing overall performance in high-frequency circuits.
These features make the IPD30N06S2L-13 ideal for use in power management, motor driving, and other heavy-duty electronic applications.

Package

The IPD30N06S2L-13 is typically packaged in a TO-220 housing. This package type offers good thermal performance and is commonly used for power MOSFETs, allowing for efficient heat dissipation in various applications.

Pinout

The IPD30N06S2L-13 is an N-channel MOSFET from Infineon Technologies, designed for various power applications. It features a pin count of 3, with the following functions:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the device can be turned on (conducting) or off (non-conducting).

2. Drain (D): This pin is where the current flows out of the MOSFET when it is turned on. It connects to the load.
3. Source (S): This pin is the reference point for the voltage. It connects to ground or the negative side of the circuit.
The device is rated for a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 30A, making it suitable for high-efficiency applications, including power supplies and motor drives.

Manufacturer

The manufacturer of the IPD30N06S2L-13 is Infineon Technologies AG. Infineon is a leading global semiconductor company headquartered in Neubiberg, Germany. It specializes in the design and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. Infineon serves various sectors, including automotive, industrial, and consumer electronics, focusing on innovations that enhance energy efficiency, connectivity, and security. The IPD30N06S2L-13 is a N-channel MOSFET, commonly used in power management applications.

Application

The IPD30N06S2L-13 is an N-channel MOSFET commonly used in applications such as power management, motor control, switch-mode power supplies, and DC-DC converters. Its high current and voltage ratings make it suitable for automotive, industrial, and consumer electronics. Additionally, it is employed in high-efficiency power switching applications and LED drivers, ensuring reliable performance in various electronic circuits.

Equivalent

The IPD30N06S2L-13 is a N-channel MOSFET from Infineon. Equivalent products include:
1. STP30NF06L - STMicroelectronics
2. IRF30N06 - Infineon/International Rectifier
3. BSS123 - NXP
4. FQP30N06L - Fairchild Semiconductor
Be sure to check specifications like Vds, Id, Rds(on), and package compatibility for a proper match.

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