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IPC100N04S51R7ATMA1

Name: IPC100N04S51R7ATMA1
Rating: 4.7 (12 reviews)

MOSFET N-CH 40V 100A 8TDSON-34

Производитель
Мфр. Часть #IPC100N04S51R7ATMA1
Пакет
Лист данных IPC100N04S51R7ATMA1 DataSheet
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Спецификации

Series	OptiMOS™
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Rds On (Max) @ Id, Vgs	1.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4810 pF @ 25 V
Power Dissipation (Max)	115W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-34
Package / Case	8-PowerTDFN
Base Product Number	IPC100

Обзор

Description

The IPC100N04S51R7ATMA1 is a high-performance N-channel MOSFET designed for various power applications. It features a low on-resistance (R_DS(on)), which minimizes conduction losses and enhances efficiency in power management systems. With a voltage rating of 100V and a current rating of 51A, this MOSFET is suitable for applications such as DC-DC converters, motor drives, and power supplies.
The device is housed in a TO-220 package, allowing for effective heat dissipation, making it ideal for environments where thermal management is critical. Its fast switching capabilities also enable it to perform well in high-frequency applications.
Overall, the IPC100N04S51R7ATMA1 combines efficiency, reliability, and thermal performance, making it a popular choice for engineers designing modern electronic circuits.

Features

The IPC100N04S51R7ATMA1 is a high-performance N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various low-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 100A, allowing it to handle significant loads.
3. Low R_DS(on): The device features a low on-resistance (R_DS(on)), typically around 1.7mΩ, which minimizes power loss during operation.
4. Fast Switching: It offers fast switching capabilities, improving efficiency in high-frequency applications.
5. Thermal Performance: The package is designed for effective heat dissipation, with a maximum junction temperature of 175°C.
6. Package Type: It comes in DPAK or similar packages, facilitating easy PCB integration.
These characteristics make the IPC100N04S51R7ATMA1 suitable for use in power supplies, motor drives, and DC-DC converters.

Package

The IPC100N04S51R7ATMA1 is packaged in a TO-220 form factor. This package type is commonly used for power transistors and offers good thermal performance and ease of mounting to heat sinks.

Pinout

The IPC100N04S51R7ATMA1 is an N-channel MOSFET. It features a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin controls the switching of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is where the current enters the MOSFET when it is in the "on" state.
3. Source (S) - This pin is the output where current exits the MOSFET when it is in the "on" state.
4. Body Diode (not explicitly a pin) - The MOSFET includes an intrinsic body diode that allows current to flow in the reverse direction when the device is off.
It is commonly used in applications such as power management and switching circuits due to its low on-resistance and high efficiency.

Manufacturer

The manufacturer of the IPC100N04S51R7ATMA1 is Infineon Technologies AG. Infineon is a leading global semiconductor company headquartered in Germany, specializing in the development and production of a wide range of semiconductor solutions. Their products are used in various applications, including automotive, industrial, and consumer electronics. Infineon focuses on areas such as power management, connectivity, and security solutions, offering innovative technologies that drive efficiency and sustainability. The company is recognized for its contributions to the advancement of power semiconductors, including MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), which are essential for modern electronic devices and systems.

Application

The IPC100N04S51R7ATMA1 is a high-performance N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor drives, and switching power supplies. Its low on-resistance and fast switching capabilities make it suitable for electronics requiring efficient power control, including consumer electronics, automotive systems, and renewable energy systems.

Equivalent

The IPC100N04S51R7ATMA1 is an N-channel MOSFET. Equivalent products include the IRF1010, STP100N04, and FQP100N04. Ensure to check specifications such as voltage, current ratings, and RDS(on) for compatibility in your specific application.

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