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IPB65R150CFD

Name: IPB65R150CFD
Rating: 4.7 (12 reviews)

Производитель
Мфр. Часть #IPB65R150CFD
Пакет
Лист данных IPB65R150CFD DataSheet
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Спецификации

Packaging	Reel
Brand	Infineon Technologies
Product Type	MOSFETs
Subcategory	Transistors
Factory Pack Quantity:Factory Pack Quantity	1000
Technology	Si
Shipping Restrictions	Mouser does not presently sell this product in your region.
REACH - SVHC	Details
Mounting Style	SMD/SMT
Package / Case	D2PAK-3 (TO-263-3)
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	22.4 A
Rds On - Drain-Source Resistance	135 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3.5 V
Qg - Gate Charge	86 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	195.3 W
Channel Mode	Enhancement
Tradename	CoolMOS
Configuration	Single
Fall Time	5.6 ns
Height	4.4 mm
Length	10 mm
Rise Time	7.6 ns
Series	CoolMOS CFD2
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	52.8 ns
Typical Turn-On Delay Time	12.4 ns
Width	9.25 mm
Part # Aliases	IPB65R150CFDATMA1 SP000907034 IPB65R150CFDATMA1
Unit Weight	0.139332 oz

Обзор

Description

The IPB65R150CFD is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency power applications, particularly in automotive and industrial electronics. The "65" in its name indicates a maximum drain-source voltage of 65 volts, while "150" refers to its continuous drain current rating of 150 amps.
This MOSFET features low on-resistance (R_DS(on)), which minimizes power losses during operation, making it suitable for use in power management circuits, motor drives, and DC-DC converters. It is part of the CoolMOS family, known for its excellent thermal performance and reliability.
The package type (usually TO-220 or similar) allows for easy mounting and heat dissipation. With its high switching speed and robustness, the IPB65R150CFD is ideal for applications requiring efficient energy conversion and control. Overall, it is a versatile component that supports modern power electronics design.

Features

The IPB65R150CFD is a power MOSFET manufactured by Infineon Technologies, designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. R_DS(on): The device offers a low on-resistance (R_DS(on)) of approximately 150 mΩ, which minimizes power losses during operation.
3. Current Rating: It can handle a continuous drain current (I_D) of up to 20A, depending on the thermal conditions.
4. Fast Switching: The MOSFET has fast switching capabilities, which enhances its performance in high-frequency applications.
5. Thermal Performance: It features a robust package design that aids in effective heat dissipation.
6. Applications: Common applications include power supplies, motor drives, and other power management systems.
These features make the IPB65R150CFD suitable for various demanding electronic applications, particularly in energy-efficient designs.

Package

The IPB65R150CFD is typically packaged in a TO-247 format, which is a type of semiconductor package designed for high-power applications. This package type provides good thermal performance and is suitable for mounting on heat sinks.

Pinout

The IPB65R150CFD is an N-channel MOSFET from Infineon Technologies, featuring a total of 5 pins.
Pin Configuration and Functions:
1. Gate (G) - This pin controls the MOSFET's switching; applying a voltage here turns the device on/off.
2. Drain (D) - The drain pin is where the load connects; it carries the current when the MOSFET is on.
3. Source (S) - This pin is connected to the ground or negative side of the power supply, allowing current to flow from the drain to the source when the device is activated.
4. Tab (Thermal) - Often used for heat dissipation; it is not a functional pin but provides a pathway for thermal management.
5. Body Diode - Integrated within the MOSFET, it allows current to flow in the reverse direction when the device is off, useful for certain applications.
The IPB65R150CFD is designed for high-efficiency power applications, with a rated voltage of 650V and a maximum continuous drain current.

Manufacturer

The IPB65R150CFD is manufactured by Infineon Technologies, a prominent semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in developing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on efficiency and sustainability in its products. The IPB65R150CFD is a part of their IGBT (Insulated Gate Bipolar Transistor) family, designed for high-performance applications in power electronics. Infineon is recognized for its innovation and commitment to advancing semiconductor technology.

Application

The IPB65R150CFD is a N-channel MOSFET commonly used in various applications, including power supplies, motor drives, converters, and inverters. It is suitable for industrial automation, electric vehicles, and renewable energy systems, particularly in high-efficiency switching applications. Its low on-resistance and high-speed switching capabilities make it ideal for enhancing energy efficiency and thermal management in power electronic devices.

Equivalent

The IPB65R150CFD is an N-channel MOSFET used in various applications. Equivalent products include the IRF150, STP65NF150, and BUK7Y6R0-55. These alternatives should be checked for specific parameters such as voltage, current ratings, and RDS(on) to ensure compatibility in your application. Always consult datasheets for detailed specifications.

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