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IPB65R110CFD

Name: IPB65R110CFD
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2

Производитель
Мфр. Часть #IPB65R110CFD
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Лист данных IPB65R110CFD DataSheet
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Спецификации

Packaging	MouseReel
Standard Pack Qty	1000

Обзор

Description

The IPB65R110CFD is a high-performance N-channel MOSFET designed for power electronics applications, particularly in industrial and automotive sectors. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 110A, making it suitable for high-voltage and high-current applications.
Key specifications include a low on-resistance (R_DS(on)) of around 110 mΩ, which enhances efficiency by minimizing power loss during operation. The device is encapsulated in a TO-220 package, allowing for effective heat dissipation. Additionally, it has a fast switching speed, making it ideal for applications like switch-mode power supplies, motor drives, and DC-DC converters.
The IPB65R110CFD is characterized by its ruggedness and reliability, featuring a comprehensive set of protection mechanisms against over-voltage, over-current, and thermal overload. These features make it a preferred choice for engineers looking to optimize performance in demanding electronic systems.

Features

The IPB65R110CFD is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current up to 110A, allowing it to manage substantial power loads.
3. On-Resistance: The device features a low on-resistance (R_DS(on)) of approximately 0.110 ohm, which helps minimize power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient switching.
5. Fast Switching: Optimized for fast switching speeds, enhancing performance in high-frequency applications.
6. Package Type: Typically available in a TO-220 package, ensuring good thermal performance and easy heat dissipation.
These features make the IPB65R110CFD suitable for applications in power supplies, motor drives, and renewable energy systems.

Package

The IPB65R110CFD is packaged in a DPAK (also known as TO-252) package type. This surface-mount package features three terminals and is commonly used for power MOSFET applications, allowing for efficient thermal management and compact design.

Pinout

The IPB65R110CFD is an N-channel MOSFET with a pin count of 5. It is designed for high-performance applications, particularly in power management and switching. The main functions of its pins are as follows:
1. Gate (G): This pin controls the MOSFET's switching behavior by applying a voltage.
2. Drain (D): This is the output pin where the load is connected; it carries the current from the drain to the source when the device is on.
3. Source (S): This pin provides the return path for the current; it is typically connected to ground in low-side applications.
4. Body Diode (internal): It has an inherent body diode that allows current flow in the reverse direction when the MOSFET is off.
5. Thermal Pad (Tab): Used for heat dissipation; it should be connected to the PCB for effective thermal management.
The IPB65R110CFD is known for its low on-resistance and high-speed switching capabilities, making it suitable for various applications, including automotive and industrial.

Manufacturer

The IPB65R110CFD is manufactured by Infineon Technologies AG, a prominent German semiconductor manufacturer. Infineon specializes in the design and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries, including automotive, industrial power control, and security technologies. Infineon is known for its innovations in energy efficiency and sustainable technology, making significant contributions to the development of solutions for electric mobility, renewable energy, and the Internet of Things (IoT). Founded in 1999, Infineon operates globally with a strong emphasis on research and development to enhance its product offerings and maintain a competitive edge in the semiconductor market.

Application

The IPB65R110CFD is an N-channel MOSFET primarily used in power electronics applications such as:
1. DC-DC converters - for efficient power conversion.
2. Motor drives - in robotics and electric vehicles.
3. Switching power supplies - to improve efficiency and reduce losses.
4. Inverters - for renewable energy systems like solar inverters.
5. High-frequency applications - due to its fast switching capabilities.
Its low on-resistance and high breakdown voltage make it suitable for these areas.

Equivalent

The IPB65R110CFD is an N-channel MOSFET from Infineon with a voltage rating of 650V and a current rating of 110A. Equivalent products include the STP65NF110, FGA65N65, and IRF3205. When selecting an equivalent, ensure to compare parameters like Rds(on), Vgs(th), and package type for compatibility in your specific application.

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