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IPB60R380C6

Name: IPB60R380C6
Rating: 4.7 (12 reviews)

Производитель
Мфр. Часть #IPB60R380C6
Пакет D2PAK-3 (TO-263-3)
Лист данных IPB60R380C6 DataSheet
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Спецификации

Packaging	Reel
Brand	Infineon Technologies
Product Type	MOSFETs
Subcategory	Transistors
Factory Pack Quantity:Factory Pack Quantity	1000
Technology	Si
REACH - SVHC	Details
Mounting Style	SMD/SMT
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	10.6 A
Rds On - Drain-Source Resistance	340 mOhms
Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	3.5 V
Qg - Gate Charge	32 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	83 W
Channel Mode	Enhancement
Tradename	CoolMOS
Configuration	Single
Fall Time	9 ns
Height	4.4 mm
Length	10 mm
Rise Time	10 ns
Series	CoolMOS C6
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	110 ns
Typical Turn-On Delay Time	15 ns
Width	9.25 mm
Part # Aliases	IPB6R38C6XT SP000660634 IPB60R380C6ATMA1
Unit Weight	4 g
Package/Case	D2PAK-3 (TO-263-3)
Delivery Restrictions	Mouser does not presently sell this product in your region.

Обзор

Description

The IPB60R380C6 is a high-performance N-channel MOSFET designed for applications requiring efficient power management. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 38A, making it suitable for high-voltage and high-current applications. This MOSFET is optimized for low on-resistance (R_DS(on)), which enhances its efficiency and reduces heat generation during operation.
Utilized in power supplies, motor drives, and industrial applications, the IPB60R380C6 offers fast switching capabilities and is ideal for synchronous rectification. Its robust construction ensures reliability in demanding environments. The device is available in a TO-220 package, facilitating easy heat dissipation and integration into various circuit designs. The IPB60R380C6 is favored by engineers for its performance, efficiency, and versatility in power electronic systems.

Features

The IPB60R380C6 is an N-channel MOSFET from Infineon, notable for its high efficiency and performance in power electronics applications. Key features include:
1. Voltage Rating: 600V, suitable for high-voltage applications.
2. Current Rating: 38A continuous drain current, allowing for significant power handling.
3. On-Resistance (RDS(on)): Low on-resistance of approximately 0.38 ohms at a gate-source voltage of 10V, reducing conduction losses.
4. Gate Threshold Voltage: Typically ranges from 2V to 4V, facilitating easier drive control.
5. Fast Switching Speed: Designed for high-speed operation, beneficial in switching power supplies and converters.
6. Package: Available in a TO-220 package, providing effective thermal dissipation.
7. Applications: Ideal for use in motor drives, power supplies, and inverters in renewable energy systems.
Overall, the IPB60R380C6 offers a combination of high voltage, current capacity, and efficiency, making it a versatile choice for numerous power management solutions.

Package

The IPB60R380C6 is packaged in a TO-247 format. This package type is designed for high-power applications, featuring a robust structure that allows for efficient heat dissipation and easier mounting on heatsinks.

Pinout

The IPB60R380C6 is an N-channel MOSFET from Infineon's CoolMOS family. It features a pin count of 6. The key pins are:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the current flows out when the device is on.
3. Source (S) - The terminal through which the current enters the device.
4. Body Diode - An intrinsic diode between the drain and source, allowing current flow in the reverse direction when necessary.
This MOSFET is designed for high-efficiency applications, such as power supplies and motor drives, and has a maximum drain-source voltage (V_DS) of 600V and a maximum continuous drain current (I_D) of 38A. The low R_DS(on) helps reduce power losses during operation.

Manufacturer

The IPB60R380C6 is manufactured by Infineon Technologies, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, automotive ICs, and industrial electronics. The company is known for its expertise in power management and energy efficiency, serving various sectors such as automotive, industrial, communication, and consumer electronics. Infineon aims to enhance the efficiency of energy usage and enable sustainable technologies, making it a key player in the semiconductor industry.

Application

The IPB60R380C6 is a high-performance N-channel MOSFET primarily used in automotive applications, power supplies, and industrial motor drives. Its features make it suitable for electric vehicles, DC-DC converters, and renewable energy systems like solar inverters. The device's low on-resistance and high-speed switching capabilities enhance efficiency in various power management applications.

Equivalent

The IPB60R380C6 is an IGBT (Insulated Gate Bipolar Transistor) from Infineon, specifically designed for high-performance applications. Equivalent products include the FGA60N30, IRGBC60, and IXGH60N60. Always check the specific ratings and characteristics to ensure compatibility in your application.

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