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IPB60R160P6

Name: IPB60R160P6
Rating: 4.7 (12 reviews)

MOSFETs HIGH POWER_LEGACY

Производитель
Мфр. Часть #IPB60R160P6
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Лист данных IPB60R160P6 DataSheet
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Спецификации

Packaging

Reel

Обзор

Description

The IPB60R160P6 is a high-performance N-channel MOSFET designed for power applications. It features a voltage rating of 600V and a continuous drain current of 160A, making it suitable for high-voltage and high-current applications, such as industrial motor drives, power supplies, and inverters.
Key specifications include a low on-resistance (RDS(on)), typically around 0.16 ohms, which enhances efficiency by minimizing power loss during operation. The device also exhibits fast switching capabilities, allowing for improved performance in fast-switching scenarios.
Packaging typically comes in a TO-247 format, providing good thermal performance due to its larger surface area. The IPB60R160P6 is designed for high reliability and thermal stability under various operating conditions, making it an ideal choice for robust power management systems.
In summary, the IPB60R160P6 combines high voltage capability, substantial current handling, and low on-resistance, catering to demanding electronic applications.

Features

The IPB60R160P6 is a high-performance N-channel MOSFET designed for various applications, including power supplies and motor drives. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 160A, allowing it to handle significant power loads.
3. Low R_DS(on): With a low on-resistance (R_DS(on)) typically around 0.16 ohms, it provides high efficiency by minimizing conduction losses.
4. Fast Switching: Designed for rapid switching applications, it enhances performance in high-frequency circuits.
5. Thermal Management: It has a high maximum junction temperature (T_j) of 175°C, ensuring reliable operation under thermal stress.
Overall, the IPB60R160P6 offers excellent performance for demanding power electronics applications while maintaining energy efficiency.

Package

The IPB60R160P6 is packaged in a TO-247 format. This package type is designed for high-power applications, providing effective thermal management and durability in various electronic circuits.

Pinout

The IPB60R160P6 is an N-channel MOSFET manufactured by Infineon Technologies. It features a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the current flows out of the MOSFET when it is turned on.
3. Source (S): This is the input pin where current enters the MOSFET. It is typically connected to the ground or the lower potential in the circuit.
The IPB60R160P6 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 160A. It is commonly used in power management and conversion applications.

Manufacturer

The IPB60R160P6 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in power semiconductors, microcontrollers, and sensors for various applications, including automotive, industrial, and consumer electronics. The company focuses on enabling energy efficiency, mobility, and security through its innovative semiconductor solutions. Infineon is recognized for its expertise in power management and has a significant presence in the automotive sector, where it provides components that enhance vehicle performance and safety.

Application

The IPB60R160P6 is an N-channel power MOSFET primarily used in applications such as power supplies, motor drives, inverter circuits, and industrial automation. Its high voltage and current handling capabilities make it suitable for energy-efficient switching in renewable energy systems, electric vehicles, and consumer electronics. Its fast switching speeds and low on-resistance also contribute to improved performance in various power management applications.

Equivalent

The IPB60R160P6 is a N-channel MOSFET. Equivalent products include the STP60NF16, IRF840, and BUK6YB60-60. Always verify specifications like voltage, current, and package type when selecting alternatives.

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