IPB60R099CPA

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IPB60R099CPA

MOSFETs N-Ch 600V 31A D2PAK-2 CoolMOS CPA

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  • Лист данных IPB60R099CPA DataSheet
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Спецификации

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Standard Pack Qty 1000

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Description

The IPB60R099CPA is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power applications. It features a low on-resistance of 0.099 ohms, making it ideal for switching applications, including power supplies, converters, and motor drives. With a voltage rating of 600V, it is suitable for use in high-voltage environments.
Key characteristics include a maximum continuous drain current of 60A, a fast switching speed, and low gate charge, which enhance its performance in power electronics. The device is housed in a TO-247 package, facilitating robust thermal management and ease of integration into various circuits.
Overall, the IPB60R099CPA is well-suited for applications requiring reliable efficiency and performance in demanding conditions.

Features

The IPB60R099CPA is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power management applications.
2. Current Rating: The continuous drain current (I_D) is rated at 99A, enabling it to handle significant loads.
3. R_DS(on): It boasts a low on-resistance of approximately 9.9 mΩ, which reduces power loss and improves efficiency during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, allowing for easy drive with standard gate voltages.
5. Package Type: Typically packaged in an TO-220 or similar package for effective heat dissipation.
6. Fast Switching: Suitable for high-speed switching applications, improving the performance of power supplies and converters.
These features make the IPB60R099CPA ideal for use in automotive, industrial, and consumer electronics applications, where reliability and efficiency are critical.

Package

The IPB60R099CPA is packaged in a TO-247 form factor. This package type is designed for power applications, allowing for effective heat dissipation and easy mounting on heat sinks.

Pinout

The IPB60R099CPA is an N-channel MOSFET designed for power applications. It features a TO-220 package with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, serving as the return path for the current.
The device is capable of handling a maximum drain-source voltage of 60V and a continuous drain current of up to 60A, making it suitable for various power management applications.

Manufacturer

The IPB60R099CPA is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions, including products for automotive, industrial, and communication sectors. The company focuses on power management, sensors, and security technologies, aiming to enable a more connected and energy-efficient world. Infineon is recognized for its contributions to power electronics, particularly in applications like electric vehicles and renewable energy systems.

Application

The IPB60R099CPA is an N-channel MOSFET primarily used in applications such as power management, motor control, and switching circuits in industrial and consumer electronics. Its low on-resistance and high-speed switching capabilities make it suitable for use in power supplies, DC-DC converters, and inverters, enhancing efficiency in automotive systems, renewable energy systems, and telecommunications.

Equivalent

The IPB60R099CPA is an N-channel MOSFET. Equivalent products include the IRF540, STP60NF06, and BUK6Y1R0-60. However, specific characteristics such as voltage, current rating, and Rds(on) should be verified against datasheets for exact equivalence. Always check parameters to ensure compatibility with your application.

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