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IPB083N10N3 G

Name: IPB083N10N3 G
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 100V 80A D2PAK-2 OptiMOS 3

Производитель
Мфр. Часть #IPB083N10N3 G
Пакет
Лист данных IPB083N10N3 G DataSheet
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Спецификации

Packaging	MouseReel
Standard Pack Qty	1000

Обзор

Description

The IPB083N10N3 G is a high-performance N-channel MOSFET designed for power management applications. With a voltage rating of 100V and a continuous drain current of 83A, this MOSFET is suitable for use in various power conversion and switching applications, including DC-DC converters, motor drives, and power supplies.
Key features include low on-resistance (Rds(on)), which minimizes power loss and improves efficiency. Its fast switching capability also allows for high-frequency operation, making it ideal for applications that require rapid switching cycles. The device is housed in a TO-220 package, providing effective thermal management and ease of mounting.
This MOSFET is particularly valued in industrial and automotive applications due to its robust performance, high reliability, and ability to handle significant power levels. Users should refer to the datasheet for detailed specifications, thermal characteristics, and recommended operating conditions to ensure optimal performance in their specific applications.

Features

The IPB083N10N3 G is a N-channel MOSFET designed for various applications, including power management and switching. Key features include:
- Voltage Rating: Typically rated for a maximum drain-source voltage (Vds) of 100V.
- Current Rating: Can handle continuous drain currents up to 83A.
- Rds(on): Low on-resistance, typically around 10 mΩ, which minimizes conduction losses and improves efficiency.
- Gate Threshold Voltage (Vgs): Usually ranges from 2V to 4V, allowing for efficient drive with lower control voltages.
- Package: Offered in a TO-220 package, ensuring good thermal performance and ease of heat dissipation.
- Fast Switching: Suitable for high-speed switching applications, enhancing performance in power conversion systems.
- Thermal Resistance: Low thermal resistance ensures efficient heat management during operation.
These characteristics make the IPB083N10N3 G suitable for use in automotive, industrial, and consumer electronics applications, where efficiency and reliability are critical.

Package

The IPB083N10N3 G is packaged in a TO-220 format. This type of package provides good thermal performance and is commonly used for power MOSFETs.

Pinout

The IPB083N10N3 G is an N-channel MOSFET with a total of 3 pins. Its pin configuration is as follows:
1. Gate (G) - This pin is used to control the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D) - This is the terminal through which the current flows when the MOSFET is in the on state. It connects to the load.
3. Source (S) - This pin is connected to the ground or negative side of the power supply, serving as the reference point for the voltage applied to the gate.
The IPB083N10N3 G is commonly used in applications such as power management and switching regulators due to its low on-resistance and high efficiency.

Manufacturer

The IPB083N10N3 G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in a variety of semiconductor and system solutions, including power semiconductors, microcontrollers, and sensors. The company serves multiple sectors such as automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security solutions. Infineon is known for its innovation in power management and has a strong emphasis on sustainability and reducing carbon footprints in its products.

Application

The IPB083N10N3 G is an N-channel MOSFET designed for high-efficiency power conversion applications. Its primary application areas include DC-DC converters, power management systems, motor drives, and industrial power supplies. It is suitable for use in consumer electronics, renewable energy systems, and automotive applications due to its low on-resistance and high-speed switching capabilities.

Equivalent

The IPB083N10N3 G is an N-channel MOSFET. Equivalent products include:
1. IRF3205
2. FDB6030BL
3. STP75NF75
4. AOD420
5. BSS138
Ensure to check specifications like voltage, current ratings, and RDS(on) for compatibility before substituting.

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