Изображения являются только для ссылки

IPB072N15N3 G

Name: IPB072N15N3 G
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 150V 100A D2PAK-2 OptiMOS 3

Производитель
Мфр. Часть #IPB072N15N3 G
Пакет
Лист данных IPB072N15N3 G DataSheet
В наличии20956

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Packaging	MouseReel
Standard Pack Qty	1000

Обзор

Description

IPB072N15N3 G is a high-performance N-channel MOSFET produced by Infineon Technologies. It is designed for high-efficiency applications, particularly in power management systems. With a low on-resistance (R_DS(on)), it minimizes conduction losses, making it suitable for use in DC-DC converters, motor drives, and other switching applications.
Key specifications include a maximum drain-source voltage (V_DS) of 150V, a continuous drain current (I_D) of 72A, and a low gate charge, which facilitates rapid switching. The device features a TO-220 package, allowing for efficient thermal management and easy mounting on PCBs.
The IPB072N15N3 G is ideal for applications requiring reliable performance under high loads and operates effectively in various environments. Its robustness and efficiency make it a popular choice among engineers for designing modern electronic systems.

Features

The IPB072N15N3 G is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, making it suitable for various power applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 72A, with a pulsed drain current capability of up to 280A, allowing it to drive high power loads.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.072Ω at a gate voltage of 10V, which ensures low conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2V and 4V, enabling efficient switching.
5. Package Type: It is available in a TO-220 package, facilitating heat dissipation and easy mounting.
6. Applications: Ideal for use in power supplies, converters, and motor drivers, where high efficiency and reliability are crucial.
These features make the IPB072N15N3 G suitable for demanding applications in power electronics.

Package

The IPB072N15N3 G is packaged in a TO-220 form factor. This package type is characterized by its metal tab for heat dissipation, making it suitable for high-power applications.

Pinout

The IPB072N15N3 G is an N-channel MOSFET designed for power applications. It typically has a TO-220 package with three pins. The pin count and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate turns the device on or off, allowing current to flow from the drain to the source.

2. Drain (D): This is the output pin where the current flows out of the MOSFET when it is in the on state. It connects to the load in various circuit configurations.
3. Source (S): This pin serves as the return path for current that flows through the MOSFET. It is typically connected to ground in low-side switching applications.
The IPB072N15N3 G is known for its low on-resistance and high-speed switching capabilities, making it suitable for applications such as power supplies, motor control, and other high-efficiency switching applications.

Manufacturer

The IPB072N15N3 G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company focuses on applications in automotive, industrial, and consumer electronics sectors, emphasizing energy efficiency and performance. Established in 1999, Infineon has a strong presence in the global semiconductor market, known for its innovation and technological advancements in power management solutions and security technologies.

Application

The IPB072N15N3 G is an N-channel MOSFET commonly used in applications such as power management, motor control, DC-DC converters, and switching applications. Its low on-resistance and high efficiency make it suitable for automotive, industrial, and consumer electronics, particularly in power supply circuits and energy-efficient devices.

Equivalent

The IPB072N15N3 G is a N-channel MOSFET with a 150V rating and low on-resistance. Equivalent products include the IRF840, STP16NF06, and FQD18N15. Always check the specific datasheet for parameters like Vds, Rds(on), and package type for compatibility.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.