Изображения являются только для ссылки

IPB027N10N5

Name: IPB027N10N5
Rating: 4.7 (12 reviews)

MOSFETs TRENCH >=100V

Производитель
Мфр. Часть #IPB027N10N5
Пакет
Лист данных IPB027N10N5 DataSheet
В наличии15836

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Packaging

Reel

Обзор

Description

IPB027N10N5 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 27A, making it suitable for high-efficiency switching and amplification in various electronic circuits. The device has a low on-resistance (R_DS(on)), which results in reduced power losses during operation, contributing to improved thermal performance and efficiency.
This MOSFET is commonly used in applications such as power supplies, motor drives, and automotive systems. It typically offers fast switching speeds, making it ideal for high-frequency applications. The package type (usually a TO-220 or similar) enables good heat dissipation, which is essential for maintaining performance during heavy load conditions. Overall, the IPB027N10N5 is a versatile component suitable for various power electronic designs.

Features

The IPB027N10N5 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: The MOSFET can handle a continuous drain current (I_D) up to 27A, allowing for robust performance in high-load scenarios.
3. Low On-Resistance: With a low on-resistance (R_DS(on)) of around 10mΩ, it offers efficient power management, reducing heat generation and improving efficiency.
4. Fast Switching Speed: It provides fast switching capabilities, beneficial for applications in power supplies and motor drives.
5. Package Type: Typically available in a TO-220 or similar package, facilitating effective heat dissipation.
These features make the IPB027N10N5 suitable for applications like DC-DC converters, inverters, and other power management systems.

Package

The IPB027N10N5 is typically packaged in a TO-220 format. This package type features three leads and is designed for efficient heat dissipation, making it suitable for high-power applications.

Pinout

The IPB027N10N5 is an N-channel MOSFET from Infineon Technologies. It has a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to this pin turns the device on (conducting state).
2. Drain (D) - This pin is connected to the load. When the MOSFET is on, it allows current to flow from the drain to the source.
3. Source (S) - This pin is connected to ground or the negative side of the power supply. It serves as the reference point for the voltage applied to the gate.
The MOSFET is designed for power switching applications, featuring low on-resistance and high efficiency, making it suitable for various applications, including power management and motor control circuits.

Manufacturer

The IPB027N10N5 is manufactured by Infineon Technologies AG. Infineon is a multinational semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive components. Infineon serves various industries such as automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security technologies. With a strong emphasis on innovation, Infineon plays a significant role in advancing technologies for a sustainable future.

Application

The IPB027N10N5 is an N-channel MOSFET used in various applications, including power management, DC-DC converters, motor control, and LED drivers. Its low on-resistance and high efficiency make it suitable for switching applications in renewable energy systems, electric vehicles, and industrial automation. Additionally, it is utilized in power supplies and inverter circuits for improved thermal performance and energy efficiency.

Equivalent

The IPB027N10N5 is an N-channel MOSFET from Infineon. Equivalent products include the IRF3205, STP75NF75, and FQD30N10L. Always verify specifications such as voltage, current, and RDS(on) to ensure compatibility for your specific application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.