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IPA70R600P7S

Name: IPA70R600P7S
Rating: 4.7 (12 reviews)

MOSFETs CONSUMER

Производитель
Мфр. Часть #IPA70R600P7S
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Лист данных IPA70R600P7S DataSheet
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Description

The IPA70R600P7S is an N-channel power MOSFET designed for high-efficiency applications. It features a maximum drain-source voltage (Vds) of 600V and continuous drain current (Id) of up to 70A, making it suitable for high voltage and high current applications. With a low on-state resistance (Rds(on)), this MOSFET minimizes power losses during operation, enhancing overall efficiency in power conversion systems.
The device includes a fast switching capability, which is beneficial for applications such as switch-mode power supplies (SMPS), inverters, and motor drives. Its robust construction allows it to handle thermal stresses effectively, providing reliability in demanding environments.
The IPA70R600P7S is packaged in a TO-247 form factor, facilitating easy heat dissipation and mounting. It is ideal for automotive, industrial, and renewable energy systems. When designing circuits with this MOSFET, it's crucial to consider the thermal management and gate drive requirements to optimize performance.

Features

The IPA70R600P7S is an N-channel MOSFET designed for high-performance applications, featuring a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 70A. Its low on-state resistance (R_DS(on)) minimizes power loss, enhancing efficiency in power management systems. The device has a maximum gate-source voltage (V_GS) rating of ±20V, allowing for flexible driving options.
Additionally, the IPA70R600P7S offers fast switching capabilities, making it suitable for applications such as power supplies, motor drives, and other high-voltage designs. The robust construction ensures reliability in harsh environments, with a high thermal performance supported by a TO-247 package.
Overall, this MOSFET is ideal for applications requiring high voltage and current handling with improved efficiency.

Package

The IPA70R600P7S is packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient heat dissipation and robust performance in various electronic circuits.

Pinout

The IPA70R600P7S is an N-channel MOSFET with a total of 4 pins. The pin configuration is as follows:
1. Gate (G) - Controls the operation of the MOSFET; a voltage applied here turns the device on or off.
2. Drain (D) - The terminal through which the current flows out of the MOSFET when it is in the 'on' state.
3. Source (S) - The terminal through which current enters the MOSFET; it's connected to the ground or the lower potential in a circuit.
4. Body (integrated) - The body diode is inherent to the MOSFET structure, providing a path for reverse current.
This device is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 70A. It is commonly used in power management, motor control, and switching applications.

Manufacturer

The IPA70R600P7S is manufactured by Infineon Technologies AG, a leading semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, communication, and consumer electronics. The company is known for its innovations in power semiconductors, microcontrollers, sensors, and security ICs, focusing on energy efficiency and sustainability. Infineon operates globally, serving a wide range of industries by delivering cutting-edge technologies that enable smart and efficient solutions.

Application

The IPA70R600P7S is an N-channel MOSFET primarily used in power electronics applications. Its areas of application include DC-DC converters, motor drives, and power supplies. It is suitable for high-efficiency switching applications due to its low on-resistance and high voltage rating, making it ideal for renewable energy systems, electric vehicles, and industrial automation.

Equivalent

The IPA70R600P7S is an IGBT (Insulated Gate Bipolar Transistor) with a voltage rating of 600V and a current rating of 70A. Equivalent products include the Infineon IGBT modules like the FGH60N60SFD, Mitsubishi CM600HA-24H, and ON Semiconductor MBRF60070. Always verify specifications for exact match suitability in applications.

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