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IPA60R190E6

Name: IPA60R190E6
Rating: 4.7 (12 reviews)

600V 0.19OHM N-CHANNEL MOSFET

Производитель
Мфр. Часть #IPA60R190E6
Пакет TO-220-3FullPack
Лист данных IPA60R190E6 DataSheet
В наличии5219

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Спецификации

Package	Bulk
ProductStatus	Active

Обзор

Description

The IPA60R190E6 is an insulated gate bipolar transistor (IGBT) designed for high-frequency applications, commonly used in power electronics like inverters and converters. It features a voltage rating of 600V and a current rating of 190A, making it suitable for medium to high-power applications.
This IGBT combines the advantages of both MOSFETs and bipolar transistors, offering high efficiency and fast switching capabilities. The "E6" designation indicates its robust construction and reliability, optimized for industrial applications.
Key characteristics include low conduction losses, high-speed switching, and excellent thermal performance, which are critical for applications such as motor drives, renewable energy systems, and industrial automation. The IPA60R190E6 is particularly valued for its ability to handle demanding electrical conditions while maintaining performance, contributing to efficient system designs.

Features

The IPA60R190E6 is a high-performance N-channel MOSFET designed for applications requiring efficient power management. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.

2. Current Rating: The device can handle continuous drain current (I_D) of up to 190A, ideal for high-current applications.
3. Low On-Resistance: With a low R_DS(on) value, it offers reduced conduction losses, enhancing efficiency.
4. Fast Switching Speed: The device supports fast switching capability, making it suitable for high-frequency applications.
5. Thermal Performance: The package design ensures effective heat dissipation, allowing for reliable operation under varying conditions.
6. Applications: Commonly used in power supplies, motor drives, and energy conversion systems.
These features make the IPA60R190E6 a versatile choice for power electronic designs requiring robust performance.

Package

The IPA60R190E6 is typically available in a TO-247 package type. This packaging is designed for high-power applications, providing efficient thermal management and robust electrical performance.

Pinout

The IPA60R190E6 is a silicon carbide (SiC) MOSFET manufactured by Infineon Technologies. It features a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. By applying a voltage to this pin, the device can be turned on or off.
2. Drain (D) - The drain pin is the output terminal where the load is connected. It is the main current-carrying terminal.
3. Source (S) - This pin is connected to the source of the current. It is typically connected to the ground or negative voltage in the circuit.
These MOSFETs are designed for high-voltage applications, with a blocking voltage rating of 600V and a maximum continuous current rating of 190A. They are widely used in power electronics applications such as converters and inverters due to their high efficiency and thermal performance.

Manufacturer

The IPA60R190E6 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, which are used in various applications such as automotive, industrial, and consumer electronics. The IPA60R190E6 is a specific type of IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power applications. Infineon focuses on innovation in energy efficiency and sustainability, positioning itself as a key player in the electronics industry, particularly in sectors that require reliable and efficient power management solutions.

Application

The IPA60R190E6 is an N-channel power MOSFET primarily used in applications such as industrial motor drives, power supplies, and DC-DC converters. Its high voltage and current ratings make it suitable for energy-efficient switching in renewable energy systems, electric vehicles, and power inverters. Additionally, it is utilized in consumer electronics for efficient power management.

Equivalent

The IPA60R190E6 is an IGBT (Insulated Gate Bipolar Transistor) with a maximum voltage of 600V and a current rating of 190A. Equivalent products include:
1. IRG4BC30KD - from Infineon
2. FGA60N60FD - from ON Semiconductor
3. CM600HA-24H - from Mitsubishi
4. STGW30H120 - from STMicroelectronics
Always check specific datasheets for exact specifications and suitability for your application.

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