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IMZ120R045M1

Name: IMZ120R045M1
Rating: 4.7 (12 reviews)

SiC MOSFETs SIC DISCRETE

Производитель
Мфр. Часть #IMZ120R045M1
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Лист данных IMZ120R045M1 DataSheet
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Спецификации

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Description

The IMZ120R045M1 is an N-channel MOSFET designed for high-efficiency power management applications. It features a maximum drain-source voltage (Vds) of 45V and a continuous drain current (Id) rating of 120A, making it suitable for various applications including power supplies, motor drives, and converters.
This MOSFET is characterized by its low on-resistance (Rds(on)), which minimizes conduction losses and enhances thermal performance. It also offers fast switching capabilities, allowing for efficient operation in high-frequency applications. The device is typically housed in a robust package, ensuring effective heat dissipation and durability under demanding conditions.
With its combination of high current handling, low loss characteristics, and fast switching, the IMZ120R045M1 is ideal for designers looking to optimize power efficiency in their electronic circuits.

Features

The IMZ120R045M1 is an N-channel MOSFET known for its high efficiency and performance in power applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 120V, suitable for medium to high voltage applications.
2. Current Capacity: Continuous drain current (I_D) of 45A, enabling it to handle significant loads.
3. R_DS(on): Low on-resistance (typically around 45 mΩ), which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): Low gate threshold, ensuring fast switching capabilities.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Applications: Ideal for use in power supplies, motor drives, and DC-DC converters, among other power management applications.
7. Thermal Performance: Designed for effective heat management, allowing for operation in demanding environments.
These features contribute to the IMZ120R045M1's reliability and performance in various electronic and industrial applications.

Package

The IMZ120R045M1 is typically packaged in a TO-220 form factor. This package type provides effective thermal management and is suitable for power applications.

Pinout

The IMZ120R045M1 is an IGBT module with a pin count of 6. It is designed for use in high-efficiency applications, such as inverters, converters, and motor drives.
The pins of the IMZ120R045M1 typically include:
1. Collector (C): Connects to the collector terminal of the IGBT.
2. Gate (G): Connects to the gate terminal for controlling the IGBT switching.
3. Emitter (E): Connects to the emitter terminal of the IGBT.
4. Thermal Reference (T): Used for temperature sensing.
5. Additional Emitter (E2): Some versions may have multiple emitter pins for better current distribution.
6. Common (COM): Connects the module's common ground.
This IGBT module offers low conduction losses and fast switching capabilities, making it suitable for various industrial applications.

Manufacturer

The IMZ120R045M1 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in a wide range of semiconductor and system solutions, focusing on areas such as power management, automotive electronics, industrial power control, and security technologies. The company is known for its innovation in power semiconductors and is a key player in the automotive and renewable energy sectors. Infineon aims to enable a more connected and sustainable world through its cutting-edge technologies and solutions.

Application

The IMZ120R045M1 is an IGBT (Insulated Gate Bipolar Transistor) module primarily used in power electronics applications. Its key application areas include renewable energy systems (like solar inverters), industrial motor drives, uninterruptible power supplies (UPS), and traction inverters for electric vehicles. It is valued for its efficiency in high-voltage and high-current applications, enabling effective power conversion and control.

Equivalent

The IMZ120R045M1 is an IGBT (Insulated Gate Bipolar Transistor) module. Equivalent products include the Siemens 6MBI120N-045, Mitsubishi CM120DY-24NF, and Infineon IGBT modules such as the BSM120GB120DN2. Always check specific datasheets for precise electrical characteristics and ratings for compatibility.

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