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IKZ75N65EH5

Name: IKZ75N65EH5
Rating: 4.7 (12 reviews)

IGBTs INDUSTRY 14

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Мфр. Часть #IKZ75N65EH5
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Лист данных IKZ75N65EH5 DataSheet
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Description

The IKZ75N65EH5 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications, particularly in industrial and automotive sectors. It features a voltage rating of 650V and a continuous drain current of 75A, making it suitable for high-voltage switching applications.
Key characteristics include low on-resistance (R_DS(on)), which minimizes conduction losses, and fast switching speeds that enhance efficiency in power conversion systems. The device is typically used in applications such as DC-DC converters, motor drives, and inverters, where efficiency and thermal performance are critical.
The IKZ75N65EH5 also includes a robust thermal management design, allowing it to operate effectively under high-temperature conditions. Its encapsulation is usually in a TO-220 package, facilitating easy heat dissipation. Overall, the IKZ75N65EH5 is an excellent choice for designers looking to optimize power efficiency and reliability in their circuits.

Features

The IKZ75N65EH5 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of 75A, allowing for substantial power handling.
3. Low R_DS(on): The device features a low on-resistance (R_DS(on)) of around 0.14 Ω, which minimizes conduction losses and improves efficiency.
4. High Speed: It offers fast switching capabilities, enabling efficient operation in high-frequency applications.
5. Thermal Performance: It has a good thermal resistance, enhancing its reliability and performance under varying temperature conditions.
6. Package Type: Typically available in a TO-220 or similar package for easy mounting and heat dissipation.
These features make the IKZ75N65EH5 ideal for applications such as power converters, inverters, and motor drives.

Package

The IKZ75N65EH5 is packaged in a TO-220 format, which is a standard package type for power devices, providing good thermal performance and ease of mounting.

Pinout

The IKZ75N65EH5 is a 650V N-channel MOSFET manufactured by Infineon Technologies. It features a total of 3 pins.
- Pin 1: Gate (G) – Controls the switching of the MOSFET.
- Pin 2: Drain (D) – The terminal through which current flows out when the MOSFET is in the "on" state.
- Pin 3: Source (S) – The terminal through which current enters the MOSFET.
This MOSFET is designed for high-efficiency applications, often used in power conversion, inverter designs, and switch-mode power supplies due to its low on-resistance and fast switching capabilities.

Manufacturer

The IKZ75N65EH5 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors used in various applications such as automotive, industrial, and consumer electronics. The company is known for its focus on innovation and sustainability, playing a significant role in enabling energy efficiency and the advancement of smart technologies.

Application

The IKZ75N65EH5 is a N-channel MOSFET typically used in power electronics applications such as power supplies, motor drives, inverters, and switching regulators. Its high voltage and current ratings make it suitable for industrial and consumer electronics, including renewable energy systems like solar inverters and electric vehicle chargers.

Equivalent

The IKZ75N65EH5 is an N-channel MOSFET with a voltage rating of 650V and a current rating of 75A. Equivalent products include the Infineon IKW75N65EH5, STMicroelectronics STP75N65M5, and ON Semiconductor NTM75N65. Always verify specifications such as RDS(on), gate threshold voltage, and package type before substituting.

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