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IKW50N60T

Name: IKW50N60T
Rating: 4.7 (12 reviews)

IKW50N60 - DISCRETE IGBT WITH AN

Производитель
Мфр. Часть #IKW50N60T
Пакет TO-247-3
Лист данных IKW50N60T DataSheet
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Спецификации

Package	Bulk
ProductStatus	Active

Обзор

Description

The IKW50N60T is a high-voltage insulated gate bipolar transistor (IGBT) designed for various power electronics applications, including motor drives, converters, and inverters. It can handle a maximum collector-emitter voltage of 600V and a continuous collector current of 50A, making it suitable for medium to high-power applications.
Key features include low conduction and switching losses, high efficiency, and rapid switching capabilities, which enhance the overall performance of power circuits. Its insulated gate structure allows for easy voltage control, enabling efficient operation at high frequencies.
The device is typically packaged in a TO-247 format, facilitating effective heat dissipation and robust thermal management. The IKW50N60T is ideal for industrial applications, renewable energy systems, and consumer electronics, providing reliability and efficiency in power conversion systems.

Features

The IKW50N60T is a 600V IGBT (Insulated Gate Bipolar Transistor) designed for power electronics applications. Key features include:
1. Voltage Rating: 600V, suitable for medium voltage applications.
2. Current Rating: 50A, enabling high power handling capabilities.
3. Low On-State Voltage: Offers reduced conduction losses during operation.
4. Fast Switching Speeds: Enhanced switching performance minimizes switching losses, making it efficient for inverter and converter applications.
5. Thermal Performance: Good thermal stability and reduced junction temperature, enhancing reliability.
6. Integrated Diode: Features a built-in freewheeling diode for improved performance in applications like motor drives.
7. Package Type: Available in a TO-247 package, which supports effective heat dissipation.
These features make the IKW50N60T suitable for applications in renewable energy systems, industrial motor drives, and power supplies.

Package

The IKW50N60T is typically packaged in a TO-247 form factor. This package type is designed for high-power applications, offering excellent thermal performance and heat dissipation capabilities.

Pinout

The IKW50N60T is an N-channel power MOSFET from Infineon Technologies. It features a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the device on or off.

2. Drain (D): This is the main current-carrying terminal. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the common ground or the negative side of the power supply. It serves as the return path for current flowing through the device.
The IKW50N60T is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 50A, making it suitable for use in power supplies and motor control applications.

Manufacturer

The IKW50N60T is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in the design and production of a wide range of semiconductor and system solutions, focusing on automotive, industrial, and consumer electronics markets. The company is known for its innovations in power semiconductors, microcontrollers, and sensors, and is a key player in the development of technologies that enable energy efficiency and sustainability.

Application

The IKW50N60T is an IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as industrial motor drives, power inverters for renewable energy systems, welding equipment, and UPS (Uninterruptible Power Supply) systems. Its high voltage and current handling capabilities make it suitable for switching applications in energy conversion and control systems.

Equivalent

The IKW50N60T is a 600V, 50A IGBT (Insulated Gate Bipolar Transistor). Equivalent products include:
1. IRG4BC30KD - 600V, 30A
2. FGA50N60SMD - 600V, 50A
3. MG50J6ES - 600V, 50A
4. STGW50H65 - 650V, 50A
Always verify specifications and application compatibility before substitution.

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DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

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