Изображения являются только для ссылки

IKW50N60H3

Name: IKW50N60H3
Rating: 4.7 (12 reviews)

IGBTs HIGH SPEED SWITCHING

Производитель
Мфр. Часть #IKW50N60H3
Пакет
Лист данных IKW50N60H3 DataSheet
В наличии3140

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Packaging	Tube
Standard Pack Qty	240

Обзор

Description

The IKW50N60H3 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It belongs to the IKW series from Infineon Technologies, featuring a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 50A at 25°C.
This MOSFET is optimized for power conversion applications, including switch-mode power supplies and electric vehicles, offering low on-state resistance (R_DS(on)) for reduced conduction losses. The IKW50N60H3 boasts fast switching speeds, which aid in minimizing switching losses and improving overall system efficiency.
The device is housed in a TO-247 package, ensuring effective thermal management. Key parameters include a gate threshold voltage (V_GS(th)) of 2-4V, making it suitable for various drive circuits. Its rugged design and advanced technology provide reliability in demanding environments. Overall, the IKW50N60H3 is an ideal choice for engineers looking to enhance power efficiency in their designs.

Features

The IKW50N60H3 is a high-voltage, N-channel IGBT (Insulated Gate Bipolar Transistor) designed for use in various power conversion applications. Key features include:
1. Voltage Rating: 600V, suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous collector currents up to 50A.
3. Low Switching Loss: Optimized for efficient operation, resulting in reduced energy losses during switching.
4. Fast Switching Speed: Enables better performance in high-frequency applications.
5. Robust Thermal Performance: Designed with a low thermal resistance, ensuring efficient heat dissipation.
6. Ruggedness: Built to withstand harsh operating conditions, providing enhanced reliability.
7. Package Type: Available in a TO-247 package, facilitating easy mounting and heat sinking.
These features make the IKW50N60H3 suitable for applications such as motor drives, inverters, and power supplies, where efficiency and reliability are critical.

Package

The IKW50N60H3 is typically available in a TO-247 package type. This package is designed for high-power applications, providing good thermal performance and robust electrical characteristics.

Pinout

The IKW50N60H3 is a high-voltage N-channel MOSFET manufactured by Infineon Technologies. It has a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows it to turn on (conduct) or off (non-conducting).
2. Drain (D): The drain pin connects to the load in a circuit. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): The source pin is the terminal through which the current exits the MOSFET. In typical applications, it is connected to ground or a lower potential.
The IKW50N60H3 is designed for applications requiring high efficiency and fast switching, such as power supplies, motor drives, and industrial applications, with a maximum voltage rating of 600V and a continuous current rating of 50A.

Manufacturer

The IKW50N60H3 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions including power semiconductors, microcontrollers, and sensors. The company focuses on various sectors such as automotive, industrial, and consumer electronics, emphasizing energy efficiency and performance. Infineon is known for its innovation in power management and has a global presence, contributing to advancements in technology and sustainable energy solutions.

Application

The IKW50N60H3 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in applications like motor drives, industrial automation, and renewable energy systems such as solar inverters. It is also suitable for power supplies, welding equipment, and induction heating systems due to its efficient switching capabilities and high thermal performance.

Equivalent

The IKW50N60H3 is an IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies. Equivalent products include:
1. HGTG30N60A4 (International Rectifier)
2. FGA60N60 (Fairchild Semiconductor)
3. IRG4PC50W (Infineon)
4. MFG50N60 (Mitsubishi Electric)
Always verify specific ratings and application suitability when considering alternatives.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.