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IKW25N120H3

Name: IKW25N120H3
Rating: 4.7 (12 reviews)

IGBTs IGBT PRODUCTS

Производитель
Мфр. Часть #IKW25N120H3
Пакет
Лист данных IKW25N120H3 DataSheet
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Спецификации

Packaging	Tube
Standard Pack Qty	240

Обзор

Description

The IKW25N120H3 is a high-performance, 1200V insulated gate bipolar transistor (IGBT) designed for various industrial applications, including motor drives, renewable energy systems, and power converters. It features a maximum collector current of 25A and is equipped with a low on-state voltage drop, enhancing efficiency and reducing thermal stress. The device utilizes advanced trench technology, which improves switching performance and reduces losses during operation.
The IKW25N120H3 is packaged in a TO-247 form factor, facilitating easy integration into existing systems while providing effective thermal management. Its high blocking voltage capacity and robust design make it suitable for demanding environments. Additionally, the IGBT is often complemented by a fast recovery diode, which improves overall circuit performance.
Overall, the IKW25N120H3 is ideal for applications requiring high reliability, efficiency, and performance in power electronics.

Features

The IKW25N120H3 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for power applications. Key features include:
- Voltage Rating: 1200 V, suitable for high-voltage applications.
- Current Rating: 25 A, allowing it to handle significant power loads.
- Low On-State Voltage (VCE(sat)): Typically around 1.7 V, ensuring high efficiency and reduced power loss during operation.
- Fast Switching Speed: Enhanced switching performance suitable for applications like inverters, welding, and motor drives.
- Thermal Resistance: Improved thermal management capabilities, enabling better performance in high-temperature environments.
- Low Gate Charge: Minimizes driving losses, facilitating easier control and integration in circuits.
- Robustness: Designed to withstand high avalanche energy, providing reliability in demanding applications.
This device is ideal for industrial and automotive applications, contributing to energy efficiency and operational reliability.

Package

The IKW25N120H3 is packaged in a TO-247 format.

Pinout

The IKW25N120H3 is a 1200V N-channel MOSFET designed for power applications. It typically comes in a TO-247 package, which has three pins. The pinout and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the MOSFET on (conducting state) or off (non-conducting state).

2. Drain (D): This pin is where the load current flows into the MOSFET. It connects to the positive side of the load in a high-side application or connects to the negative side in a low-side application.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the gate voltage and completes the circuit for current to flow from the drain to the source when the MOSFET is on.
Overall, the IKW25N120H3 is suited for applications like switch mode power supplies, motor control, and other high-voltage, high-current applications.

Manufacturer

The IKW25N120H3 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial power control, and the Internet of Things (IoT). The company is known for its innovations in power management, sensors, and security technologies, focusing on enhancing energy efficiency and performance in electronic devices. Infineon serves a wide range of industries, making it a key player in the semiconductor market.

Application

The IKW25N120H3 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in industrial applications such as motor drives, power inverters, and renewable energy systems like solar inverters. It is suitable for high-efficiency switching in applications like electric vehicles, power supplies, and induction heating. Its robust design allows for effective operation in high-temperature and high-voltage environments.

Equivalent

The IKW25N120H3 is an IGBT (Insulated Gate Bipolar Transistor) rated for 1200V and 25A. Equivalent products include the Infineon IGBT modules like the IKW30N120H3 and the IXYS IGBT, such as the IXGH25N120. Additionally, you might consider similar products from other manufacturers like Mitsubishi, ON Semiconductor, and STMicroelectronics, ensuring they match the voltage, current ratings, and switching characteristics. Always verify specifications for compatibility in your application.

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DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

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