IKQ75N120CH3

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IKQ75N120CH3

IGBTs INDUSTRY 14

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  • Мфр. Часть #IKQ75N120CH3
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  • Лист данных IKQ75N120CH3 DataSheet
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Description

The IKQ75N120CH3 is a high-voltage N-channel MOSFET designed for various power switching applications. With a maximum drain-source voltage (V_DS) of 1200 volts and a continuous drain current (I_D) rating of 75 amperes, it is suitable for use in power supplies, motor drivers, and other high-efficiency circuits. The device features a low on-state resistance (R_DS(on)), which enhances its performance by minimizing power losses during operation.
This MOSFET is typically constructed using advanced silicon technology, ensuring high reliability and thermal stability. It comes in a TO-247 package, which facilitates effective heat dissipation, allowing for better performance in high-power applications.
Key specifications include a typical gate threshold voltage (V_GS(th)) and fast switching speeds, making it ideal for applications requiring rapid on/off transitions. The IKQ75N120CH3 is often favored for its efficiency and robustness in demanding environments.

Features

The IKQ75N120CH3 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 1200V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of 75A, it is suitable for demanding power management tasks.
3. Low On-Resistance: With a low R_DS(on), it minimizes conduction losses, enhancing efficiency in power conversion and switching applications.
4. Fast Switching Speed: The device is optimized for fast switching, which is crucial for high-frequency applications, reducing turn-on and turn-off delays.
5. Thermal Performance: It features a high thermal conductivity package, allowing effective heat dissipation and reliability in operation.
6. Package Type: Typically available in TO-220 or similar packages for easy mounting and heat sinking.
These features make the IKQ75N120CH3 ideal for use in applications such as switch-mode power supplies, inverters, and motor drives.

Package

The IKQ75N120CH3 is packaged in a TO-247 form factor. This package type is designed for high-power applications, providing efficient thermal management and ease of mounting in electronic circuits.

Pinout

The IKQ75N120CH3 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for various power applications. It typically features a pin count of 6 in a TO-247 package.
The functions of the pins are as follows:
1. Gate (G) - Controls the on/off state of the IGBT.
2. Collector (C) - The main terminal for the output current, connected to the load.
3. Emitter (E) - Provides a return path for current, connected to the negative side of the circuit.
4. Auxiliary Collector (C) - Used for providing feedback or sensing current.
5. Emitter (E) - A second emitter pin for improved thermal performance.
6. Gate-Emitter (G-E) - Often includes a diode for protection against voltage spikes.
This IGBT is suitable for applications like motor drives, inverters, and power converters due to its ability to handle high voltage and current levels efficiently.

Manufacturer

The IKQ75N120CH3 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in providing innovative semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its expertise in power semiconductors, microcontrollers, and sensor technologies. Infineon's products are widely used in energy-efficient systems and advanced automotive applications, contributing to advancements in electric mobility, renewable energy, and IoT solutions.

Application

The IKQ75N120CH3 is an IGBT (Insulated Gate Bipolar Transistor) used in various high-power applications such as industrial motor drives, renewable energy systems (like solar inverters), and power supply circuits. Its high voltage and current handling make it suitable for applications in electric vehicles, traction systems, and other power conversion systems where efficiency and thermal performance are critical.

Equivalent

The IKQ75N120CH3 is a 1200V, 75A IGBT. Equivalent products include the Infineon IGBT series like FZ1200R75K2 and the ON Semiconductor MCE1005-12. Ensure to check specifications like voltage rating, current rating, and package type for compatibility in your application.

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