Изображения являются только для ссылки

HYG009N04LS1C2

Name: HYG009N04LS1C2
Rating: 4.7 (12 reviews)

Производитель
Мфр. Часть #HYG009N04LS1C2
Пакет
Лист данных HYG009N04LS1C2 DataSheet
В наличии6278

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Manufacturer	HUAYI
Package	DFN-8(5.1x5.8)
Operating Temperature	-55℃~+175℃
Current - Continuous Drain(Id)	200A
Pd - Power Dissipation	75W
Drain to Source Voltage	40V
RDS(on)	0.75mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)@Id)	1.8V
Type	1 N-channel
Gate Charge(Qg)	89nC@10V
Input Capacitance(Ciss@Vds)	5876pF
Reverse Transfer Capacitance (Crss@Vds)	58pF@25V

Обзор

Description

HYG009N04LS1C2 appears to refer to a specific product, likely an electronic component or a module, but without additional context, it's challenging to provide precise details. It might be a part number or model identifier used in industries such as electronics or manufacturing.
If it pertains to a specific category, such as semiconductors, sensors, or a particular application, please provide more context for a targeted introduction. Generally, components like this could be involved in various applications, ranging from consumer electronics to industrial automation.
For accurate specifications, features, and applications, consulting the manufacturer's datasheet or product documentation would be essential.

Features

The HYG009N04LS1C2 is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 40V, making it suitable for low-voltage applications.
2. Current Handling: It has a continuous drain current (I_D) capacity of up to 50A, allowing it to handle significant load demands.
3. R_DS(on): Low on-resistance (around 9mΩ at V_GS = 10V), which contributes to lower power losses and improved thermal performance.
4. Fast Switching Speed: Optimized for high-speed switching, making it ideal for applications such as DC-DC converters and motor control.
5. Thermal Performance: Designed with a TO-220 package for effective heat dissipation, enhancing reliability in demanding environments.
6. Gate Threshold Voltage: Features a low gate threshold voltage, enabling efficient drive with lower voltage control signals.
These characteristics make the HYG009N04LS1C2 suitable for automotive, industrial, and consumer electronics applications.

Package

The HYG009N04LS1C2 is packaged in a TO-220 format. This type of package is commonly used for power MOSFETs, providing effective heat dissipation and ease of mounting on a heatsink.

Pinout

The HYG009N04LS1C2 is a power MOSFET produced by Hynix Semiconductor. It features a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the main current flows out of the device when it is turned on.
3. Source (S): This pin is the terminal through which the current enters the device when it is conducting.
4. Body Diode (BD): This is an internal feature of the MOSFET that allows current to flow in the opposite direction when the MOSFET is off.
5. Thermal Pad (TP): While not a pin in the traditional sense, this pad is used for heat dissipation and should be connected to a ground or heat sink for thermal management.
The device is commonly used in power management and switching applications.

Manufacturer

The HYG009N04LS1C2 is manufactured by HYG, a company that specializes in producing power semiconductor devices, particularly MOSFETs (metal-oxide-semiconductor field-effect transistors). HYG is known for its innovation in the field of power electronics, focusing on high efficiency and performance products suitable for various applications, including automotive, industrial, and consumer electronics. Their products are essential for managing power in electronic circuits, contributing to energy efficiency and improved performance in devices.

Application

The HYG009N04LS1C2 is a MOSFET primarily used in power applications, including DC-DC converters, motor drives, and power management systems. It is suitable for high-efficiency power supplies, electric vehicles, and renewable energy systems. Additionally, it can be employed in industrial automation and consumer electronics to improve energy efficiency and thermal performance.

Equivalent

The HYG009N04LS1C2 chip is a power MOSFET, and its equivalents include devices like the IRF3205, STP75NF75, and FDP7030. When searching for equivalents, consider specifications such as voltage rating, current rating, R_DS(on), and package type to ensure compatibility. Always verify datasheets for precise matching.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.