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HIP2211FBZ-T

Name: HIP2211FBZ-T
Rating: 4.7 (12 reviews)

IC GATE DRVR HALF-BRIDGE 8SOIC

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Мфр. Часть #HIP2211FBZ-T
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Спецификации

Part Status	Active
DigiKey Programmable	Not Verified
Driven Configuration	Half-Bridge
Channel Type	Independent
Number of Drivers	2
Gate Type	MOSFET (N-Channel)
Voltage - Supply	6V ~ 18V
Logic Voltage - VIL, VIH	1.47V, 1.84V
Current - Peak Output (Source, Sink)	3A, 4A
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	115 V
Rise / Fall Time (Typ)	20ns, 20ns
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC
Base Product Number	HIP2211

Обзор

Description

HIP2211FBZ-T is a high-speed, single-channel, low-side gate driver designed to drive N-channel MOSFETs and IGBTs in various applications. It features a fast rise and fall times, enabling efficient switching and minimizing power losses. The device operates over a wide range of supply voltages, typically between 4.5V to 20V, making it versatile for different circuit requirements.
Key features include a low output impedance, which provides strong drive capability, and built-in protection mechanisms such as under-voltage lockout (UVLO) to prevent operation at insufficient supply voltages. Additionally, it supports a wide operating temperature range, enhancing reliability in demanding environments. Applications include motor drives, power supplies, and DC-DC converters, where rapid switching and high efficiency are critical. The package is designed for easy integration into various PCB layouts, making the HIP2211FBZ-T a popular choice among engineers for efficient power management solutions.

Features

The HIP2211FBZ-T is a high-speed, dual-channel driver designed for driving MOSFETs in various power applications. Key features include:
1. Dual Driver Configuration: Supports two independent MOSFETs for half-bridge or full-bridge topologies.
2. High Drive Current: Capable of sourcing and sinking up to 1.5A, enabling fast switching speeds for improved efficiency.
3. Wide Supply Voltage Range: Operates from 4.5V to 15V, accommodating various system requirements.
4. Fast Propagation Delay: Low propagation delay times ensure quick response, enhancing overall performance.
5. Integrated Level Shifter: Facilitates operation with high-side and low-side drivers in high-voltage applications.
6. Thermal Protection: Built-in thermal shutdown feature safeguards against overheating.
7. Small Footprint: Available in a compact package (e.g., SOIC-8), saving PCB space.
These features make the HIP2211FBZ-T suitable for applications such as motor control, power supplies, and other projects requiring efficient MOSFET driving.

Package

The HIP2211FBZ-T is packaged in a 20-lead SOIC (Small Outline Integrated Circuit) format.

Pinout

The HIP2211FBZ-T is a high-speed gate driver IC with a pin count of 8. It is designed for driving high-side and low-side MOSFETs or IGBTs in half-bridge configurations.
Pin Functions:
1. VCC (Pin 1): Supply voltage input for the IC.
2. GND (Pin 2): Ground reference for the IC.
3. HO (Pin 3): High-side gate drive output.
4. LO (Pin 4): Low-side gate drive output.
5. VS (Pin 5): Source connection for the high-side driver; it serves as an input for the bootstrap capacitor.
6. VB (Pin 6): Bootstrap voltage input for the high-side driver.
7. IN (Pin 7): Input control signal for the low-side driver.
8. COM (Pin 8): Common connection for both high-side and low-side drivers, typically connected to the source of the low-side MOSFET.
This compact driver is ideal for applications in power conversion and motor control.

Manufacturer

The HIP2211FBZ-T is manufactured by Renesas Electronics Corporation. Renesas is a global semiconductor company based in Japan, specializing in microcontrollers, analog, power, and system-on-chip (SoC) products. The company serves a wide range of industries, including automotive, industrial, and consumer electronics, providing solutions that enable advanced functionalities and improved energy efficiency. Renesas focuses on innovative technologies and integrated solutions to support the growing demands of the IoT (Internet of Things) and various embedded applications.

Application

The HIP2211FBZ-T is a high-speed, dual MOSFET driver primarily used in applications such as power supply circuits, motor drives, and synchronous rectification. Its fast switching capabilities make it suitable for high-frequency applications in telecommunications, renewable energy systems, and industrial automation. Additionally, it supports various topologies like half-bridge and full-bridge configurations, enhancing efficiency in switch-mode power supplies and converters.

Equivalent

The HIP2211FBZ-T is a high-performance half-bridge driver, and its equivalents include the MIC4427, IR2110, and LM5101. These chips provide similar functionalities in driving high and low side MOSFETs in various applications, such as motor control and power converters. Always check the specific datasheets for compatibility in your design requirements.

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DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.