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FQP6N90C

Name: FQP6N90C
Rating: 4.7 (12 reviews)

MOSFET N-CH 900V 6A TO220-3

Производитель
Мфр. Часть #FQP6N90C
Пакет TO-220-3
Лист данных FQP6N90C DataSheet
В наличии4409

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Спецификации

Package	Tube
Series	QFET®
ProductStatus	Obsolete
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	900 V
Current-ContinuousDrain(Id)@25°C	6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	2.3Ohm @ 3A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	40 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	1770 pF @ 25 V
PowerDissipation(Max)	167W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220-3

Обзор

Description

The FQP6N90C is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power switching applications. With a maximum drain-source voltage of 900V and a continuous drain current rating of 6A, this component is suitable for high-voltage circuits and various power electronics applications. Its low on-resistance (R_DS(on)) minimizes power losses during operation, enhancing efficiency in power conversion and management systems.
The FQP6N90C features a TO-220 package, which allows for effective heat dissipation, making it ideal for use in environments where thermal management is critical. It's commonly used in applications such as power supplies, motor drivers, and electronic switch circuits. The device can be driven by standard gate voltages, making it compatible with most control circuits. Overall, the FQP6N90C is a reliable choice for engineers and designers looking for robust performance in high-voltage applications.

Features

The FQP6N90C is an N-channel MOSFET designed for high voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 900V.
2. Continuous Drain Current: The maximum continuous drain current (Id) is 6A, making it suitable for various power applications.
3. Rds(on): It has a low on-resistance (Rds(on)) of approximately 0.8 ohms, reducing power loss and improving efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 3V to 4V, enabling it to be driven by lower voltage levels.
5. Fast Switching: Designed for fast switching, it is ideal for applications like switch-mode power supplies and inverters.
6. Package Type: Typically available in a TO-220 package, providing good thermal performance and ease of mounting.
Overall, the FQP6N90C is suitable for high-voltage applications requiring efficient power management.

Package

The FQP6N90C is typically packaged in a TO-220 format. This package type is designed for efficient heat dissipation, making it suitable for high-power applications in electronic circuits.

Pinout

The FQP6N90C is a high-voltage N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. It receives the voltage signal that turns the MOSFET on or off.
2. Drain (D): This pin connects to the load. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The FQP6N90C is designed for applications that require high voltage and current handling, typically used in power management circuits, switching power supplies, and motor drivers. Its maximum drain-source voltage (V_DS) is 900V, and its continuous drain current (I_D) is 6A.

Manufacturer

The FQP6N90C is manufactured by Fairchild Semiconductor, a company known for its production of a wide range of semiconductor products, including power MOSFETs, diodes, and other discrete components. Fairchild, founded in 1957, specializes in providing solutions for various industries such as automotive, industrial, and consumer electronics. In 2016, Fairchild was acquired by ON Semiconductor, which has further expanded its portfolio and market reach. The company focuses on innovative technologies to enhance energy efficiency and reliability in electronic devices.

Application

The FQP6N90C is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its application areas include switching power supplies, DC-DC converters, motor drives, and audio amplifiers. It is suitable for high-efficiency designs due to its low on-resistance, making it ideal for automotive, industrial, and consumer electronics.

Equivalent

The FQP6N90C is a N-channel MOSFET with a 900V rating and a 6A current capacity. Equivalent products include:
1. IRF840
2. STP16NF06
3. MTP6N90E
4. 2SK3731
5. FQPF6N90C
Always verify specifications like Vds, Id, Rds(on), and package type for compatibility in your application.

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