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FQP2N60C

Name: FQP2N60C
Rating: 4.7 (12 reviews)

MOSFET N-CH 600V 2A TO220-3

Производитель
Мфр. Часть #FQP2N60C
Пакет TO-220-3
Лист данных FQP2N60C DataSheet
В наличии2465

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Спецификации

Package	Bulk,Tube
Series	QFET®
ProductStatus	Obsolete
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	600 V
Current-ContinuousDrain(Id)@25°C	2A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	4.7Ohm @ 1A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	12 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	235 pF @ 25 V
PowerDissipation(Max)	54W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220-3

Обзор

Description

The FQP2N60C is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It can handle a drain-source voltage (V_DS) of up to 600 volts and a continuous drain current (I_D) of about 2.5A at a maximum junction temperature of 25°C. Its low on-resistance (R_DS(on)) and fast switching capabilities make it suitable for power management applications, including switching power supplies, motor control, and high-voltage circuits.
Key features include a gate threshold voltage (V_GS(th)) typically between 2-4V, allowing it to be driven effectively by low-voltage control signals. The device is packaged in a TO-220 format, facilitating effective heat dissipation. The FQP2N60C is popular among electronics engineers for its reliability and performance in various applications, especially in areas requiring efficient power handling and thermal management.

Features

The FQP2N60C is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle up to 600 volts, making it suitable for high-voltage circuits.
2. Continuous Drain Current: The maximum continuous drain current is 2 A at a case temperature of 25°C.
3. RDS(on): It offers a low on-resistance (RDS(on)) of approximately 0.8 ohms, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage (Vgs): The gate threshold voltage ranges from 2 to 4 volts, allowing for easy driving with low-voltage logic.
5. Package Type: Typically available in a TO-220 package, facilitating thermal management and heat dissipation.
6. Fast Switching: Capable of fast switching speeds, making it suitable for applications like switching power supplies and motor drivers.
Overall, the FQP2N60C is a versatile MOSFET ideal for high-voltage, low-to-moderate power applications.

Package

The FQP2N60C is typically packaged in a TO-220 package type. This packaging provides good thermal performance and facilitates easy heat dissipation, making it suitable for power applications.

Pinout

The FQP2N60C is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): The drain is the terminal through which the current exits the MOSFET. It is connected to the load in a circuit.
3. Source (S): The source is the terminal through which current enters the MOSFET. It is typically connected to ground or a lower potential in the circuit.
The FQP2N60C is designed for high-voltage applications, capable of handling up to 600V and a continuous drain current of up to 2A. It is commonly used in switching power supplies and other high-voltage applications.

Manufacturer

The FQP2N60C is manufactured by Fairchild Semiconductor, which is a company specializing in the production of semiconductor components. Fairchild, founded in 1957, is known for its wide range of products, including power MOSFETs, integrated circuits, and other discrete components used in various applications such as consumer electronics, industrial equipment, and automotive systems. In 2016, Fairchild Semiconductor was acquired by ON Semiconductor, a larger company that focuses on providing a diverse portfolio of semiconductor solutions for a variety of markets, including automotive, industrial, and communications.

Application

The FQP2N60C is a N-channel MOSFET primarily used in power electronics applications, including switch-mode power supplies, motor control circuits, lighting control, and audio amplifiers. Its high voltage rating (600V) and significant current handling capabilities make it suitable for high-efficiency switching and amplification in industrial, automotive, and consumer electronics.

Equivalent

The FQP2N60C is an N-channel MOSFET with a 600V, 2.0A rating. Equivalent products include the STP2N60, IRF240, and MTP2N60. Ensure to verify specifications such as Vds, Id, Rds(on), and package type to ensure compatibility for your specific application.

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